Photoelectric converter and solid-state imaging device

ABSTRACT

A photoelectric converter according to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/772,258 filed 12 Jun. 2020, which is a national stage applicationunder 35 U.S.C. 371 and claims the benefit of PCT Application No.PCT/JP2018/045267 having an international filing date of 10 Dec. 2018,which designated the United States, which PCT application claimed thebenefit of Japanese Patent Application No. 2017-244346 filed 20 Dec.2017, the entire disclosures of each of which are incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates, for example, to a photoelectricconverter and a solid-state imaging device including this.

BACKGROUND ART

In recent years, solid-state imaging devices such as CCD (Charge CoupledDevice) image sensors or CMOS (Complementary Metal Oxide Semiconductor)image sensors have been developed. In a case where colors are separated,general solid-state imaging devices are each structured to havephotoelectric conversion sections irradiated with only necessary opticalinformation by disposing optical filters (color filters) on therespective photoelectric conversion sections. The photoelectricconversion sections are disposed side by side. The optical filters(color filters) include a two-dimensional array of primary color filtersof red, green, and blue.

A solid-state imaging device in which photoelectric conversion sectionsare stacked has been developed for this. The photoelectric conversionsections photoelectrically convert the respective pieces of light in thered, green, and blue wavelength bands. In such a solid-state imagingdevice, the respective pieces of light in the red and blue wavelengthbands are photoelectrically converted by photoelectric conversionsections (photodiodes PD1 and PD2) formed inside a semiconductorsubstrate (Si substrate), and the light in the green wavelength band isphotoelectrically converted by an organic photoelectric conversion filmformed on the back surface side of the semiconductor substrate. Forexample, PTL 1 discloses a solid-state imaging device provided with acharge accumulation electrode on a first electrode side of the firstelectrode and a second electrode disposed to be opposed to each otherwith a photoelectric conversion layer (organic photoelectric conversionfilm) therebetween. The charge accumulation electrode is disposed to bespaced apart from the first electrode and opposed to the photoelectricconversion layer with an insulation layer interposed therebetween.

CITATION LIST Patent Literature

-   PTL 1: Japanese Unexamined Patent Application Publication No.    2017-157816

SUMMARY OF THE INVENTION

Incidentally, a solid-state imaging device in which an inorganicphotoelectric conversion section provided in a semiconductor substrate(Si substrate) and an organic photoelectric conversion film formed onthe back surface side of the semiconductor substrate are stacked asdescribed above is requested to improve a spectral characteristic toallow a light component to be detected with no color mixture.

It is desirable to provide a photoelectric converter and a solid-stateimaging device that make it possible to improve a spectralcharacteristic. The solid-state imaging device includes thephotoelectric converter.

A photoelectric converter according to an embodiment of the presentdisclosure includes: an organic photoelectric conversion section; aninorganic photoelectric conversion section; and an optical filter. Theorganic photoelectric conversion section includes a first electrode, asecond electrode, and an organic photoelectric conversion layer. Thefirst electrode includes one electrode and another electrode. The secondelectrode is disposed to be opposed to the first electrode. The organicphotoelectric conversion layer is disposed between the first electrodeand the second electrode and is electrically coupled to the oneelectrode. The organic photoelectric conversion layer and the otherelectrode are provided with an insulation layer therebetween. Theinorganic photoelectric conversion section has the first electrodedisposed between the inorganic photoelectric conversion section and theorganic photoelectric conversion section. The optical filter is providedbetween the organic photoelectric conversion section and the inorganicphotoelectric conversion section.

A solid-state imaging device according to an embodiment of the presentdisclosure includes one or more photoelectric converters according tothe above-described embodiment of the present disclosure for a pluralityof pixels.

In the photoelectric converter according to the embodiment of thepresent disclosure and the solid-state imaging device according to theembodiment, the organic photoelectric conversion section is providedwith the optical filter between the inorganic photoelectric conversionsection and the first electrode. The organic photoelectric conversionsection has the organic photoelectric conversion layer between the pairof electrodes (first electrode and second electrode). The organicphotoelectric conversion section and the inorganic photoelectricconversion section have the first electrode disposed therebetween. Thismakes it possible to remove an unnecessary wavelength component ofwavelengths passing through the organic photoelectric conversionsection.

The photoelectric converter according to the embodiment of the presentdisclosure and the solid-state imaging device according to theembodiment are each provided with the optical filter between the organicphotoelectric conversion section one (first electrode) of the pair ofelectrodes of which includes the plurality of electrodes and theinorganic photoelectric conversion section. The pair of electrodes isdisposed to be opposed to each other with the organic photoelectricconversion layer interposed therebetween. Accordingly, an unnecessarywavelength component of wavelengths passing through the organicphotoelectric conversion section is removed. This makes it possible toimprove spectral characteristics.

It is to be noted that the effects described here are not necessarilylimited, but any of effects described in the present disclosure may beincluded.

BRIEF DESCRIPTION OF DRAWING

FIG. 1 is a schematic cross-sectional view of an example of a schematicconfiguration of a photoelectric converter according to an embodiment ofthe present disclosure.

FIG. 2 is an equivalent circuit diagram of the photoelectric convertersillustrated in FIG. 1 .

FIG. 3 is a schematic diagram illustrating disposition of lowerelectrodes and transistors included in controllers of the photoelectricconverter illustrated in FIG. 1 .

FIG. 4 is a schematic diagram illustrating a positional relationshipbetween main parts of respective photoelectric converters in pixels P1,P2, P3, and P4 disposed in two rows and two columns.

FIG. 5A is an example of disposition of optical filters in one pixelunit illustrated in FIG. 4 .

FIG. 5B is an example of disposition of optical filters obtained bycombining four pixel units each of which is illustrated in FIG. 5A.

FIG. 6A is an example of the disposition of the optical filters in theone pixel unit illustrated in FIG. 4 .

FIG. 6B is an example of the disposition of the optical filters obtainedby combining the four pixel units each of which is illustrated in FIG.6A.

FIG. 7 is a cross-sectional view for describing a method ofmanufacturing the photoelectric converter illustrated in FIG. 1 .

FIG. 8 is a cross-sectional view illustrating a process following FIG. 7.

FIG. 9 is a timing chart illustrating an operation example of aphotoelectric converter illustrated in FIG. 1 .

FIG. 10A is an example of disposition of optical filters in amodification example 1 of the present disclosure.

FIG. 10B is another example of the disposition of the optical filters inthe modification example 1 of the present disclosure.

FIG. 11 is a schematic diagram illustrating a positional relationshipbetween main parts obtained by combining four pixel units in each ofwhich four photoelectric converters are disposed in two rows and twocolumns in a modification example 2 of the present disclosure.

FIG. 12A is an example of disposition of optical filters in amodification example 2 of the present disclosure.

FIG. 12B is another example of the disposition of the optical filters inthe modification example 2 of the present disclosure.

FIG. 13 is a schematic diagram illustrating a stacked configuration ofmain parts of photoelectric converters according to a modificationexample 3 of the present disclosure.

FIG. 14A is a schematic plan view of a positional relationship betweenrespective sections in the photoelectric converters illustrated in FIG.13 .

FIG. 14B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 14A.

FIG. 14C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 14A.

FIG. 15A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 15B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 15A.

FIG. 15C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 15A.

FIG. 16A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 16B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 16A.

FIG. 16C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 16A.

FIG. 17A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 17B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 17A.

FIG. 17C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 17A.

FIG. 18A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 18B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 18A.

FIG. 18C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 18A.

FIG. 19A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 19B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 19A.

FIG. 19C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 19A.

FIG. 20A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 20B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 20A.

FIG. 20C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 20A.

FIG. 21A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 21B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 21A.

FIG. 21C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 21A.

FIG. 22A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 22B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 22A.

FIG. 22C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 22A.

FIG. 23A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 23B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 23A.

FIG. 23C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 23A.

FIG. 24A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 24B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 24A.

FIG. 24C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 24A.

FIG. 25A is a schematic plan view of the positional relationship betweenthe respective sections in the photoelectric converters illustrated inFIG. 13 .

FIG. 25B is a schematic cross-sectional view taken along a line I-Iillustrated in FIG. 25A.

FIG. 25C is a schematic cross-sectional view taken along a line II-IIillustrated in FIG. 25A.

FIG. 26 is a block diagram illustrating a solid-state imaging deviceincluding a photoelectric converter illustrated in FIG. 1 or the like asa pixel.

FIG. 27 is a functional block diagram illustrating an example of anelectronic apparatus (camera) including the solid-state imaging deviceillustrated in FIG. 26 .

FIG. 28 is a block diagram depicting an example of a schematicconfiguration of an in-vivo information acquisition system.

FIG. 29 is a view depicting an example of a schematic configuration ofan endoscopic surgery system.

FIG. 30 is a block diagram depicting an example of a functionalconfiguration of a camera head and a camera control unit (CCU).

FIG. 31 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 32 is a diagram of assistance in explaining an example ofinstallation positions of an outside-vehicle information detectingsection and an imaging section.

MODES FOR CARRYING OUT THE INVENTION

The following describes embodiments of the present disclosure in detailwith reference to the drawings. The following description is a specificexample of the present disclosure, but the present disclosure is notlimited to the following embodiment. In addition, the present disclosuredoes not limit the disposition, dimensions, dimension ratios, and thelike of respective components illustrated in the diagrams thereto. It isto be noted that description is given in the following order.

1. Embodiment (Example in which an optical filter is disposed between anorganic photoelectric conversion section and an inorganic photoelectricconversion section)

1-1. Configuration of Photoelectric Converter 1-2. Method ofManufacturing Photoelectric Converter 1-3. Workings and Effects 2.Modification Examples

2-1. Modification Example 1 (Example in which an optical filter thattransmits visible light is added)2-2. Modification Example 2 (Example of a photoelectric converter thatabsorbs IR in an organic photoelectric conversion section)2-3. Modification Example 3 (Example of a photoelectric converter inwhich a light-shielding property is added to a through electrode)

3. Application Examples 1. EMBODIMENT

FIG. 1 illustrates a cross-sectional configuration of a photoelectricconverter (photoelectric converter 10) according to an embodiment of thepresent disclosure. FIG. 2 is an equivalent circuit diagram of thephotoelectric converters 10 illustrated in FIG. 1 . FIG. 3 schematicallyillustrates the disposition of lower electrodes 21 and transistorsincluded in controllers of the photoelectric converters 10 illustratedin FIG. 1 . The photoelectric converter 10 is included in one pixel(unit pixel P) in a solid-state imaging device (solid-state imagingdevice 1; see FIG. 26 ) such as a CMOS image sensor used in anelectronic apparatus such as a digital still camera or a video camera,for example.

1-1. Configuration of Photoelectric Converter

FIG. 1 illustrates an example in which the two photoelectric converters10 are disposed side by side, and are included in the respective pixelsP (pixels P1 and P2). Each of the photoelectric converters 10 is of aso-called longitudinal spectral type in which, for example, an organicphotoelectric conversion section 20 and an inorganic photoelectricconversion section 32 are stacked in the longitudinal direction. Theorganic photoelectric conversion section 20 is provided on a firstsurface (back surface) 30A side of a semiconductor substrate 30. Theinorganic photoelectric conversion section 32 is embedded and formed inthe semiconductor substrate 30. For example, two types of inorganicphotoelectric conversion sections 32B and 32R are disposed in thesemiconductor substrate 30 in the planar direction. The organicphotoelectric conversion section 20 has an organic photoelectricconversion layer 22 between the lower electrode 21 (first electrode) andan upper electrode 23 (second electrode) that are opposed to each other.The organic photoelectric conversion layer 22 is formed by using anorganic material. This organic photoelectric conversion layer 22includes a p-type semiconductor and an n-type semiconductor, and has abulk heterojunction structure in the layer. The bulk hetero junctionstructure is a p/n junction surface formed by mixture of a p-typesemiconductor and an n-type semiconductor.

The lower electrode 21 of the photoelectric converter 10 according tothe present embodiment includes a plurality of electrodes (readoutelectrode 21A and accumulation electrode 21B. Among the electrodesincluded in the organic photoelectric conversion section 20, the lowerelectrode 21 is disposed on the opposite side to a light incidence sideS1 with respect to the organic photoelectric conversion layer 22.Further, the present embodiment has a configuration in which there isprovided an optical filter 51 between the organic photoelectricconversion section 20 and the inorganic photoelectric conversion section32. More specifically, the present embodiment has a configuration inwhich the inorganic photoelectric conversion sections 32R and 32B areeach provided at the position opposed to the accumulation electrode 21Bof the lower electrode 21 in the pixel P. There are provided opticalfilters 51B and 51R between these accumulation electrode 21B andinorganic photoelectric conversion section 32B and between theseaccumulation electrode 21B and inorganic photoelectric conversionsection 32R, respectively.

The organic photoelectric conversion section 20 and the inorganicphotoelectric conversion sections 32B and 32R perform photoelectricconversion by selectively detecting respective pieces of light inwavelength bands different from each other. Specifically, the organicphotoelectric conversion section 20 acquires a color signal of green(G). The inorganic photoelectric conversion sections 32B and 32Rrespectively acquire a color signal of blue (B) and a color signal ofred (R).

It is to be noted that, in the present embodiment, description is givenof a case of reading an electron as a signal charge (case where then-type semiconductor region is used as a photoelectric conversion layer)of a pair (electron-hole pair) of the electron and hole generated fromphotoelectric conversion. In addition, in the drawings, “+(plus)”assigned to “p” and “n” indicates that the concentration of p-type orn-type impurities is high, and “++” indicates that the concentration ofp-type or n-type impurities is further higher than “+”. In addition, therespective photoelectric converters provided in the pixel P1 and thepixel P2 have configurations similar to each other, except that thephotoelectric converters selectively detect respective pieces of lightin wavelength bands different from each other in the inorganicphotoelectric conversion section 32B and the inorganic photoelectricconversion section 32R.

For example, the pixel P1 and the pixel P2 are each provided with afloating diffusions (floating diffusion layers) FD1 (region 36B in thesemiconductor substrate 30) and FD3 (region 38C in the semiconductorsubstrate 30), a transfer transistor Tr3, an amplifier transistor(modulator) AMP, a reset transistor RST, a selection transistor SEL, anda multilayer wiring line 40 on a second surface (front surface) 30B ofthe semiconductor substrate 30. The multilayer wiring line 40 has aconfiguration in which wiring layers 41, 42, and 43, for example, arestacked in an insulating layer 44.

It is to be noted that the diagram illustrates the first surface 30Aside of the semiconductor substrate 30 as a light incidence side S1, andthe second surface 30B side thereof as a wiring layer side S2.

The organic photoelectric conversion section 20 has a configuration inwhich, for example, a lower electrode 21, the organic photoelectricconversion layer 22, and an upper electrode 23 are stacked in this orderfrom the first surface 30 side of the semiconductor substrate 30. Inaddition, there is provided an insulation layer 27 between the lowerelectrode 21 and the organic photoelectric conversion layer 22. Thelower electrode 21 is formed separately for each of the pixels P1 andP2, for example, and includes the readout electrode 21A and theaccumulation electrode 21B that are separated from each other with aninter-layer insulation layer 26 interposed therebetween, as described indetail below. The readout electrode 21A of the lower electrode 21 iselectrically coupled to the organic photoelectric conversion layer 22through an opening 27H provided in the insulation layer 27. FIG. 1illustrates an example in which the organic photoelectric conversionlayer 22 and the upper electrode 23 are provided as continuous layerscommon to the plurality of photoelectric converters 10, but the organicphotoelectric conversion layers 22 and the upper electrodes 23 may beseparately formed for each of the photoelectric converters 10. Forexample, a layer (fixed charge layer) 24 having fixed charges, adielectric layer 25 having an insulating property, and the inter-layerinsulation layer 26 are provided, for example, between the first surface30A of the semiconductor substrate 30 and the lower electrode 21. Eachof the pixels P1 and P2 is provided with a wiring line 39B and theabove-described optical filter 51 (optical filter 51B for the pixel P1and optical filter 51R for the pixel P2) in the inter-layer insulationlayer 26. The wiring line 39B is electrically coupled to theaccumulation electrode 21B of the lower electrode 21. A protective layer28 is provided on the upper electrode 23. Optical members such as aplanarization layer (not illustrated) and an on-chip lens 52 aredisposed above the protective layer 28.

There is provided a through electrode 34 between the first surface 30Aand the second surface 30B of the semiconductor substrate 30. Theorganic photoelectric conversion section 20 is coupled, through thisthrough electrode 34, to a gate Gamp of the amplifier transistor AMP andthe one source/drain region 36B of the reset transistor RST (resettransistor Tr1rst) also serving as the floating diffusion FD1. Thisallows the photoelectric converter 10 to favorably transfer charges(here, electrons) generated in the organic photoelectric conversionsection 20 on the first surface 30A side of the semiconductor substrate30 to the second surface 30B side of the semiconductor substrate 30through the through electrode 34.

The lower end of the through electrode 34 is coupled to a couplingsection 41A in the wiring layer 41, and the coupling section 41A and thegate Gamp of the amplifier transistor AMP are coupled through the lowerfirst contact 45. The coupling section 41A and the floating diffusionFD1 (region 36B) are coupled through a lower second contact 46, forexample. The upper end of the through electrode 34 is coupled to thereadout electrode 21A through a pad section 39A and an upper firstcontact 29A, for example.

The through electrode 34 is provided to each of the organicphotoelectric conversion sections 20 of respective photoelectricconverters 10A, for example. The through electrode 34 has a function ofa connector for the organic photoelectric conversion section 20 and thegate Gamp of the amplifier transistor AMP, and the floating diffusionFD1, and serves as a transmission path for charges (here, electrons)generated in the organic photoelectric conversion section 20.

A reset gate Grst of the reset transistor RST is disposed next to thefloating diffusion FD1 (one source/drain region 36B of the resettransistor RST). This makes it possible to cause the reset transistorRST to reset the charges accumulated in the floating diffusion FD1.

In the photoelectric converter 10, light inputted to the organicphotoelectric conversion section 20 from the upper electrode 23 side isabsorbed by the organic photoelectric conversion layer 22. Excitons thusgenerated move to an interface between an electron donor and an electronacceptor included in the organic photoelectric conversion layer 22, andundergo exciton separation, that is, dissociate into electrons andholes. The charges (electrons and holes) generated here are transportedto different electrodes by diffusion due to a difference in carrierconcentration or by an internal electric field due to a difference inwork functions between an anode (here, the lower electrode 21) and acathode (here, the upper electrode 23), and are detected as aphotocurrent. In addition, the application of an electric potentialbetween the lower electrode 21 and the upper electrode 23 makes itpossible to control directions in which electrons and holes aretransported.

The following describes configurations, materials, or the like ofrespective sections.

The organic photoelectric conversion section 20 is an organicphotoelectric converter that absorbs the green light corresponding to aportion or all of selective wavelength bands (e.g., 450 nm or more and650 nm or less) to generate an electron-hole pair.

As described above, the lower electrode 21 includes the readoutelectrode 21A and the accumulation electrode 21B that are formedseparately. The readout electrode 21A transfers charges (here,electrons) generated in the organic photoelectric conversion layer 22 tothe floating diffusion FD1. The readout electrode 21A is coupled to thefloating diffusion FD1, for example, through the upper first contact29A, the pad section 39A, the through electrode 34, the coupling section41A, and the lower second contact 46. The accumulation electrode 21Baccumulates, in the organic photoelectric conversion layer 22, theelectrons serving as signal charges of the charges generated in theorganic photoelectric conversion layer 22. The accumulation electrode21B is provided in each of regions that are directly opposed to thelight receiving surfaces of the inorganic photoelectric conversionsections 32B and 32R formed in the semiconductor substrate 30, and coverthe light receiving surfaces, for example. It is to be noted that theaccumulation electrode 21B is preferably larger than the readoutelectrode 21A, which makes it possible to accumulate a large number ofcharges. In addition, it is sufficient if the accumulation electrodes21B are directly opposed to the inorganic photoelectric conversionsections 32B and 32R as described above. The accumulation electrodes 21Bdo not necessarily have to be formed in the entire light receivingsurface regions opposed to the inorganic photoelectric conversionsections 32 and 32R.

The lower electrode 21 includes an electrically-conducive layer havinglight-transmissivity, and includes, for example, ITO (indium-tin oxide).However, as a material included in the lower electrode 21, a tin oxide(SnO₂)-based material obtained by adding a dopant or a zinc oxide-basedmaterial formed by adding a dopant to aluminum zinc oxide (ZnO) may beused in addition to this ITO. Examples of the zinc oxide-based materialsinclude aluminum zinc oxide (AZO) obtained by adding aluminum (Al) asthe dopant, gallium (Ga)-added gallium zinc oxide (GZO), and indium(In)-added indium zinc oxide (IZO). In addition to these, CuI, InSbO₄,ZnMgO, CuInO₂, MgIN₂O₄, CdO, ZnSnO₃, or the like may also be used.

The organic photoelectric conversion layer 22 converts optical energyinto electric energy. The organic photoelectric conversion layer 22includes, for example, two or more types of organic semiconductormaterials (p-type semiconductor material or n-type semiconductormaterial) that each function as a p-type semiconductor or an n-typesemiconductor. The organic photoelectric conversion layer 22 has ajunction surface (p/n junction surface) between these p-typesemiconductor material and n-type semiconductor material in the layer.The p-type semiconductor relatively functions as an electron donor(donor), and the n-type semiconductor relatively functions an electronacceptor (acceptor). The organic photoelectric conversion layer 22provides a field in which excitons generated at the time of lightabsorption are separated into electrons and holes, and specifically,excitons are separated into electrons and holes on the interface (p/njunction surface) between the electron donor and the electron acceptor.

The organic photoelectric conversion layer 22 may include, in additionto the p-type semiconductor material and the n-type semiconductormaterial, an organic semiconductor material, i.e., a so-called dyematerial, that photoelectrically converts light in a predeterminedwavelength band and transmits light in another wavelength band. In acase where the organic photoelectric conversion layer 22 is formed byusing three types of organic semiconductor materials including thep-type semiconductor material, the n-type semiconductor material, andthe dye material, the p-type semiconductor material and the n-typesemiconductor material each preferably include a material that transmitslight in a visible region (e.g., 450 nm to 800 nm). The thickness of theorganic photoelectric conversion layer 22 is, for example, 50 nm to 500nm.

Examples of the organic semiconductor materials included in the organicphotoelectric conversion layer 22 include quinacridone, chlorinatedboron subphthalocyanine, pentacene, benzothienobenzothiophene,fullerene, and derivatives thereof. The organic photoelectric conversionlayer 22 includes a combination of two or more types of the organicsemiconductor materials described above. The above-described organicsemiconductor materials function as a p-type semiconductor or an n-typesemiconductor, depending on the combination.

It is to be noted that the organic semiconductor materials included inthe organic photoelectric conversion layer 22 are not particularlylimited. In addition to the organic semiconductor materials listedabove, for example, any one type of naphthalene, anthracene,phenantherene, tetracene, pyrene, perylene, or fluoranthene, orderivatives thereof is preferably used. Alternatively, a polymer such asphenylenevinylene, fluorene, carbazole, indole, pyrene, pyrrole,picoline, thiophene, acetylene, and diacetylene, or a derivative thereofmay be used. Additionally, it is possible to preferably use a metalcomplex dye, a cyanine-based dye, a merocyanine-based dye, aphenylxanthene-based dye, a triphenylmethane-based dye, arhodacyanine-based dye, a xanthene-based dye, a macrocyclicazaannulene-based dye, an azulene-based dye, naphthaquinone, ananthraquinone-based dye, a chain compound in which a condensedpolycyclic aromatic group such as anthracene and pyrene and an aromaticring or a heterocyclic compound are condensed, a cyanine-like dye bondedby two nitrogen-containing hetero rings such as quinoline,benzothiazole, and benzoxazole that have a squarylium group and croconicmethine group as a bonded chain, or by a squarylium group or a croconicmethine group, etc. It is to be noted that the above-described metalcomplex dye is preferably, but not limited to, a dithiol metalcomplex-based dye, a metallophthalocyanine dye, a metalloporphyrine dye,or a ruthenium complex dye.

There may be provided other layers between the organic photoelectricconversion layer 22 and the lower electrode 21 (specifically between theorganic photoelectric conversion layer 22 and the insulation layer 27)and between the organic photoelectric conversion layer 22 and the upperelectrode 23. Specifically, for example, an underlying film, a holetransport layer, an electron blocking film, the organic photoelectricconversion layer 22, a hole blocking film, a buffer film, an electrontransport layer, a work function adjusting film, and the like may bestacked in order from the lower electrode 21 side.

The upper electrode 23 includes an electrically-conductive film havinglight-transmissivity similar to that of the lower electrode 21. In thesolid-state imaging device 1 including the photoelectric converter 10 asone pixel, the upper electrode 23 may be separated for each pixel P, ormay be formed as an electrode common to each pixel P. The thickness ofthe upper electrode 23 is, for example, 10 nm to 200 nm.

The fixed charge layer 24 may be a film having a positive fixed chargeor a film having a negative fixed charge. As materials of the filmhaving the negative fixed charge, hafnium oxide, aluminum oxide,zirconium oxide, tantalum oxide, titanium oxide, and the like areincluded. In addition, as a material other than the above-describedmaterials, lanthanum oxide, praseodymium oxide, cerium oxide, neodymiumoxide, promethium oxide, samarium oxide, europium oxide, gadoliniumoxide, terbium oxide, dysprosium oxide, holemium oxide, thulium oxide,ytterbium oxide, lutetium oxide, yttrium oxide, an aluminum nitridefilm, a hafnium oxynitride film, an aluminum oxynitride film, or thelike may be used.

The fixed charge layer 24 may also have a configuration in which two ormore types of films are stacked. This makes it possible to furtherimprove a function of a hole accumulation layer in a case of a filmhaving the negative fixed charge, for example.

Although materials of the dielectric layer 25 are not limited inparticular, the dielectric layer 25 includes a silicon oxide film, TEOS,a silicon nitride film, a silicon oxynitride film, or the like, forexample.

The inter-layer insulating layer 26 includes, for example, asingle-layer film including one type of silicon oxide, silicon nitride,silicon oxynitride (SiON), and the like, or a stacked film including twoor more types thereof. The wiring lines 39B are provided in theinter-layer insulation layer 26 along with the pad sections 39A thateach couple the readout electrode 21A of the lower electrode 21 and thethrough electrode 34. Each of these wiring lines 39B is a driving wiringline for applying a voltage to the accumulation electrode 21B, and iselectrically coupled to the accumulation electrode 21B. Further, theoptical filters 51B and 51R are respectively provided at the positionsopposed to the inorganic photoelectric conversion sections 32B and 32Rin layers (semiconductor substrate 30 side) lower than the accumulationelectrodes 21B.

The optical filters 51B and 51R each selectively transmit light in apredetermined wavelength band. Specifically, the optical filter 51Bselectively transmits, for example, a wavelength (blue light; firstwavelength band) of 450 nm to 495 nm. The optical filter 51R selectivelytransmits, for example, a wavelength (red light; second wavelength band)of 620 nm to 750 nmnm or less. FIG. 4 schematically illustrates thepositional relationship between respective sections (organicphotoelectric conversion layers 22, optical filters 51, and inorganicphotoelectric conversion sections 32B and 32R) of the photoelectricconverters 10. FIG. 4 schematically illustrates the positionalrelationship between the main parts of the respective photoelectricconverters in the pixels P1, P2, P3, and P4. The pixels P1, P2, P3, andP4 are disposed in two rows and two columns in the XY planar direction,and included in one pixel unit Pu. In a case where the pixels P1, P2,P3, and P4 are disposed in two rows and two columns in this way, it ispossible to dispose the optical filters 51B and 51R on respectivediagonal lines, for example, as illustrated in FIG. 5A. FIG. 5Billustrates that four pixel units Pu each of which is illustrated inFIG. 4 are disposed, and the optical filters 51B and 51R are disposed ina checkerboard pattern. That is, the different optical filters 51B and51R are disposed at the respective adjacent positions. The dispositionof the optical filters 51B and 51R is not limited thereto, but the sameoptical filters may be disposed, for example, in the Z axis direction,for example, as illustrated in FIG. 6A. In a case where four pixel unitsPu each of which is illustrated in FIG. 6A are disposed, the opticalfilters 51B and 51R are disposed in a striped pattern as illustrated inFIG. 6B.

The optical filters 51 (51B and 51R) may be any filters as long as thefilters each selectively transmit light in a predetermined wavelengthband as described above. Examples thereof include organic pigmentdispersion type, nanohole type, metal ion implantation type, quantum dottype, and multilayer interference type optical filters.

The organic pigment dispersion type optical filter is a general colorfilter.

The nanohole type optical filter includes, for example, a periodicalarray of a plurality of openings on a metal thin film. Periodicaldisposition with the distance between the openings controlled allows themetal thin film to transmit only light having a predeterminedwavelength. For example, periodically disposing openings each having adiameter of 150 nm at a pitch of 260 nm configures the optical filter51B to transmit blue light having a wavelength of 450 nm to 495 nm. Forexample, periodically disposing openings each having a diameter of 150nm at a pitch of 420 nm configures the optical filter 51R to transmitred light having a wavelength of 620 nm to 750 nm.

The metal ion implantation type optical filter includes a metalnanoparticle, and is formable, for example, by implanting metal ionsinto an inorganic material film such as a silicon oxide film by ionimplantation.

The quantum dot type optical filter has quantum dots dispersed in alayer. It is preferable that quantum dots each have a higher refractiveindex than that of a layer (base material of the optical filter) inwhich the quantum dot is embedded, and be uniform in diameter. Thisoffers an optical characteristic to selectively transmit light within apredetermined wavelength range.

The multilayer interference type optical filter includes a multilayerfilm (multilayer interference film) in which two or more types of filmshaving different refractive indices are alternately stacked. Examples ofthe films having different refractive indices include a combination of asilicon oxide (SiO₂) film and a silicon nitride (SiN) film, acombination of a silicon oxide (SiO₂) film and a titanium oxide (TiO₂)film, and the like.

The insulation layer 27 electrically separates the accumulationelectrode 21B and the organic photoelectric conversion layer 22 fromeach other. The insulation layer 27 is provided on the inter-layerinsulation layer 26, for example, to cover the lower electrode 21. Inaddition, the insulation layer 27 has the opening 27H on the readoutelectrode 21A of the lower electrode 21, and the readout electrode 21Aand the organic photoelectric conversion layer 22 are electricallycoupled through this opening 27H. The insulating layer 27 is formable,for example, by using a material similar to that of the inter-layerinsulating layer 26, and includes, for example, a single-layer filmincluding one type of silicon oxide, silicon nitride, silicon oxynitride(SiON), and the like, or a stacked film including two or more typesthereof. The thickness of the insulating layer 27 is, for example, 20 nmto 500 nm.

The protective layer 28 includes a material having light-transmissivity,and includes, for example, a single layer film including any of siliconoxide, silicon nitride, silicon oxynitride, and the like, or a stackedfilm including two or more types thereof. The thickness of theprotective layer 28 is, for example, 100 nm to 30000 nm.

It is to be noted that there may be a light-shielding film, for example,above the readout electrode 21A in the protective layer 28. In thatcase, it is preferable to provide the light-shielding film to cover theregion of the readout electrode 21A in direct contact with at least theorganic photoelectric conversion layer 22 without covering at least theaccumulation electrode 21B.

The semiconductor substrate 30 includes, for example, an n-type silicon(Si) substrate, and has a p-well 31 in a predetermined region. Thesecond surface 30B of the p-well 31 is provided with the transfertransistors Tr 3 and Tr 4, the amplifier transistor AMP, the resettransistor RST, the selection transistor SEL, and the like. In addition,a peripheral portion of the semiconductor substrate 30 is provided witha peripheral circuit (not illustrated) including a logic circuit or thelike.

The reset transistor RST1 (reset transistor Tr1rst) resets the chargestransferred from the organic photoelectric conversion section 20 to thefloating diffusion FD1, and includes, for example, a MOS transistor.Specifically, the reset transistor Tr1rst includes a reset gate Grst1, achannel formation region 36A, and the source/drain regions 36B and 36C.The reset gate Grst1 is coupled to a reset line RST1. The onesource/drain region 36B of the reset transistor Tr1rst also serves asthe floating diffusion FD1. The other source/drain region 36C includedin the reset transistor Tr1rst is coupled to a power supply VDD.

The amplifier transistor AMP1 is a modulator that modulates, into avoltage, an amount of the charges generated in the organic photoelectricconversion section 20, and includes, for example, a MOS transistor.Specifically, the amplifier transistor AMP includes the gate Gamp, achannel formation region 35A, and the source/drain regions 35B and 35C.A gate Gamp1 is coupled to the readout electrode 21A and the onesource/drain region 36B (floating diffusion FD1) of the reset transistorTr1rst through the lower first contact 45, the coupling section 41A, thelower second contact 46, the through electrode 34, and the like. Inaddition, the one source/drain region 35B shares a region with the othersource/drain region 36C included in the reset transistor Tr1rst, and iscoupled to the power supply VDD, for example.

A selection transistor SEL1 (selection transistor TR1sel) includes agate Gsel1, a channel formation region 34A, and source/drain regions 34Band 34C. The gate Gsel1 is coupled to a selection line SEL1. Inaddition, the one source/drain region 34B shares a region with the othersource/drain region 35C included in the amplifier transistor AMP, andthe other source/drain region 34C is coupled to a signal line (dataoutput line) VSL1.

The reset transistor RST2 (reset transistor Tr2rst) resets the chargestransferred from the organic photoelectric conversion section 20 to thefloating diffusion FD2, and includes, for example, a MOS transistor.Specifically, the reset transistor Tr2rst includes a reset gate Grst2,the channel formation region 36A, and the source/drain regions 36B and36C. The reset gate Grst is coupled to a reset line RST2. The onesource/drain region 36B of the reset transistor Tr2rst also serves asthe floating diffusion FD2. The other source/drain region 36C includedin the reset transistor Tr2rst is coupled to the power supply VDD.

The amplifier transistor AMP2 is a modulator that modulates, into avoltage, an amount of the charges generated in the organic photoelectricconversion section 20, and includes, for example, a MOS transistor.Specifically, the amplifier transistor AMP2 includes the gate Gamp2, thechannel formation region 35A, and the source/drain regions 35B and 35C.A gate Gamp2 is coupled to the readout electrode 21A and the onesource/drain region 36B (floating diffusion FD2) of the reset transistorTr2rst through the lower first contact 45, the coupling section 41A, thelower second contact 46, the through electrode 34, and the like. Inaddition, the one source/drain region 35B shares a region with the othersource/drain region 36C included in the reset transistor Tr2rst, and iscoupled to the power supply VDD, for example.

A selection transistor SEL2 (selection transistor TR2sel) includes agate Gsel2, the channel formation region 34A, and the source/drainregions 34B and 34C. The gate Gsel2 is coupled to a selection line SEL2.In addition, the one source/drain region 34B shares a region with theother source/drain region 35C included in the amplifier transistor AMP2,and the other source/drain region 34C is coupled to a signal line (dataoutput line) VSL2.

Each of the inorganic photelectric conversion sections 32B and 32R has ap-n junction in a predetermined region of the semiconductor substrate30. The inorganic photoelectric conversion section 32B detects bluelight selectively transmitted by the optical filter 51B, and accumulatesthe detected blue light as signal charges corresponding to blue. Theinorganic photoelectric conversion section 32R detects red lightselectively transmitted by the optical filter 51R, and accumulatessignal charges corresponding to red. It is to be noted that blue (B) isa color corresponding to a wavelength band of 450 nm to 495 nm, forexample, and red (R) is a color corresponding to a wavelength band of620 nm to 750 nm, for example. It is sufficient if the inorganicphotoelectric conversion sections 32B and 32R are able to detect piecesof light of a portion or all of the respective wavelength bands. Theinorganic photelectric conversion section 32B and the inorganicphotelectric conversion section 32R each have, for example, a p+ regionthat is to be a hole accumulation layer, and an n region that is to bean electron accumulation layer. In addition, FIG. 1 illustrates anexample in which the two types of inorganic photoelectric conversionsections 32B and 32R are formed to have the same height in the filmthickness direction (Y axis direction) in the semiconductor substrate 30and disposed side by side, but this is not limitative. For example, theymay be provided at spatially different positions (different in height inthe film thickness direction) in the semiconductor substrate 30.

The transfer transistor Tr3 (transfer transistor TR3trs) transfers, tothe floating diffusion FD3, signal charges (here, electrons)corresponding to blue which are generated and accumulated in theinorganic photoelectric conversion section 32B. In addition, thetransfer transistor TR3trs is coupled to a transfer gate line TG3.Further, the floating diffusion FD3 is provided in a region 37C in thevicinity of the gate Gtrs3 of the transfer transistor TR3trs. Thecharges accumulated in the inorganic photoelectric conversion section32B are read out to the floating diffusion FD3 through the transferchannel formed along the gate Gtrs3.

The transfer transistor Tr4 (transfer transistor TR4trs) transfers, tothe floating diffusion FD4, the signal charges (electrons, here)generated and accumulated in the inorganic photoelectric conversionsection 32R. The signal charges correspond to red. The transfertransistor Tr4 (transfer transistor TR4trs) includes, for example, a MOStransistor. In addition, the transfer transistor TR4trs is coupled to atransfer gate line TG4. Further, the floating diffusion FD4 is providedin the region 38C in the vicinity of the gate Gtrs4 of the transfertransistor TR4trs. The charges accumulated in the inorganicphotoelectric conversion section 32R are read out to the floatingdiffusion FD4 through the transfer channel formed along the gate Gtrs4.

The second surface 30B side of the semiconductor substrate 30 is furtherprovided with a reset transistor TR3rst, an amplifier transistor TR3amp,and a selection transistor TR3sel included in the controller of theinorganic photoelectric conversion section 32B. In addition, there areprovided a reset transistor TR4rst, an amplifier transistor TR4amp, anda selection transistor TR4sel included in the controller of theinorganic photoelectric conversion section 32R.

The reset transistor TR3rst includes a gate, a channel formation region,and a source/drain region. The gate of the reset transistor TR3rst iscoupled to a reset line RST3, and one of the source/drain regions of thereset transistor TR3rst is coupled to the power supply VDD. The othersource/drain region of the reset transistor TR3rst also serves as thefloating diffusion FD3.

The amplifier transistor TR3amp includes a gate, a channel formationregion, and a source/drain region. The gate is coupled to the othersource/drain region (floating diffusion FD3) of the reset transistorTR3rst. In addition, one of the source/drain regions included in theamplifier transistor TR3amp shares a region with one of the source/drainregions included in the reset transistor TR3rst, and is coupled to thepower source VDD, for example.

The selection transistor TR3sel includes a gate, a channel formationregion, and a source/drain region. The gate is coupled to a selectionline SEL3. In addition, one of the source/drains region included in theselection transistor TR3sel shares a region with the other source/drainregion included in the amplifier transistor TR3amp. The othersource/drain region included in the selection transistor TR3sel iscoupled to a signal line (data output line) VSL3.

The reset transistor TR4rst includes a gate, a channel formation region,and a source/drain region. The gate of the reset transistor TR4rst iscoupled to a reset line RST4, and one of the source/drain regionsincluded in the reset transistor TR4rst is coupled to the power supplyVDD. The other source/drain region included in the reset transistorTR4rst also serves as the floating diffusion FD4.

The amplifier transistor TR4amp includes a gate, a channel formationregion, and a source/drain region. The gate is coupled to the othersource/drain region (floating diffusion FD4) included in the resettransistor TR4rst. In addition, one of the source/drain regions includedin the amplifier transistor TR4amp shares a region with one of thesource/drain regions included in the reset transistor TR4rst, and iscoupled to the power source VDD, for example.

The selection transistor TR4sel includes a gate, a channel formationregion, and a source/drain region. The gate is coupled to a selectionline SEL4. In addition, one of the source/drains region included in theselection transistor TR4sel shares a region with the other source/drainregion included in the amplifier transistor TR4amp. The othersource/drain region included in the selection transistor TR4sel iscoupled to a signal line (data output line) VSL4.

The reset lines RST1, RST2, RST3, and RST4, the selection lines SEL1,SEL2, SEL3, and SEL4, and the transfer gate lines TG3 and TG4 are eachcoupled to a vertical drive circuit 112 included in a drive circuit. Thesignal lines (data output lines) VSL1, VSL2, VSL3, and VSL4 are coupledto a column signal processing circuit 113 included in the drive circuit.

A lower first contact 45, the lower second contact 46, the upper firstcontact 29A, and an upper second contact 29B each include, for example,a doped silicon material such as PDAS (Phosphorus Doped AmorphousSilicon), or a metallic material such as aluminum (Al), tungsten (W),titanium (Ti), cobalt (Co), hafnium (Hf), or tantalum (Ta).

1-2. Method of Manufacturing Photoelectric Converter

It is possible to manufacture the photoelectric converter 10 accordingto the present embodiment, for example, in the following manner. It isto be noted that description is made here with reference to thephotoelectric converter 10 in the pixel P1, but it is also possible tosimilarly form the photoelectric converter 10 in the pixel P2 in thesame manufacturing process.

FIGS. 7 and 8 each illustrate a method of manufacturing thephotoelectric converter 10 in order of processes. First, as illustratedin FIG. 7 , the p-well 31, for example, is formed as a firstelectrically-conductive well in the semiconductor substrate 30. Thesecond electrically-conductive (e.g., n-type) inorganic photoelectricconversion section 32B is formed in this p-well 31. A p+ region isformed in the vicinity of the first surface 30A of the semiconductorsubstrate 30.

As also illustrated in FIG. 7 , on the second surface 30B of thesemiconductor substrate 30, after n+ regions serving, for example, asthe floating diffusions FD1 to FD4 are formed, a gate insulating layer33 and a gate wiring layer 47 including the respective gates of thetransfer transistor Tr3, the transfer transistor Tr4, the selectiontransistor SEL, the amplifier transistor AMP, and the reset transistorRST are formed. This forms the transfer transistor Tr3, the transfertransistor Tr4, the selection transistor SEL, the amplifier transistorAMP, and the reset transistor RST. Further, the multilayer wiring line40 is formed on the second surface 30B of the semiconductor substrate30. The multilayer wiring line 40 includes wiring layers 41 to 43 andthe insulating layer 44. The wiring layers 41 to 43 include the lowerfirst contact 45, the lower second contact 46, and the coupling section41A.

As a base of the semiconductor substrate 30, for example, an SOI(Silicon on Insulator) substrate is used in which the semiconductorsubstrate 30, an embedded oxide film (not illustrated), and a holdingsubstrate (not illustrated) are stacked. Although not illustrated inFIG. 7 , the embedded oxide film and the holding substrate are joined tothe first substrate surface 30A of the semiconductor substrate 30. Afterion implantation, an annealing process is performed.

Then, a support substrate (not illustrated), another semiconductor base,or the like is joined to the second surface 30B side (multilayer wiringline 40 side) of the semiconductor substrate 30 and flipped vertically.Subsequently, the semiconductor substrate 30 is separated from theembedded oxide film and the holding substrate of the SOI substrate toexpose the first surface 30A of the semiconductor substrate 30. It ispossible to perform these processes with technology used in a normalCMOS process such as ion implantation and CVD (Chemical VaporDeposition).

Then, as illustrated in FIG. 8 , the semiconductor substrate 30 isprocessed from the first surface 30A side with dry etching, for example,to form an annular opening 34H, for example. The opening 34H has a depthpenetrating from the first surface 30A to the second surface 30B of thesemiconductor substrate 30 as illustrated in FIG. 8 , and reaching thecoupling section 41A, for example.

Subsequently, for example, the negative fixed charge layer 24 is formedon the first surface 30A of the semiconductor substrate 30 and the sidesurface of the opening 34H. Two or more types of films may be stacked asthe negative fixed charge layer 24. This makes it possible to furtherimprove the function of the hole accumulation layer. The dielectriclayer 25 is formed after the negative fixed charge layer 24 is formed.Next, the pad section 39A is formed at a predetermined position on thedielectric layer 25, and an insulation layer is then formed on thedielectric layer 25 and the pad section 39A. Further, the opticalfilters 51 (52B and 51R) are patterned and formed.

The organic photoelectric conversion section 20, the on-chip lens 52,and the like are sequentially formed thereafter. Specifically, forexample, an electrically-conductive film is formed on an insulationlayer 26A, and a photoresist PR is then formed at a predeterminedposition on the electrically-conductive film. Afterwards, etching andremoving the photoresist PR pattern the wiring line 39B.

Next, an insulation layer is formed on the insulation layer 26A and thewiring line 39B, and the surface of the insulation layer 26B is thenplanarized by using a CMP (Chemical Mechanical Polishing) method, forexample. Subsequently, respective openings are formed on the pad section39A and the wiring line 39B, and the openings are then filled, forexample, with electrically-conductive materials such as Al to form theupper first contact 29A and the upper second contact 29B.

Subsequently, an electrically-conductive film is formed on the upperfirst contact 29A, the upper second contact 29B, and the inter-layerinsulation layer 26, and the photoresist PR is then formed at apredetermined position in the electrically-conductive film. Afterwards,the readout electrode 21A and the accumulation electrode 21B arepatterned by etching and removing the photoresist PR.

Next, the insulating layer 27 is formed on the inter-layer insulatinglayer 26, the readout electrode 21A, and the accumulation electrode 21B,and the opening 27H is then provided on the readout electrode 21A.Afterwards, the organic photoelectric conversion layer 22, the upperelectrode 23, and the protective layer 28 are formed on the inter-layerinsulation layer 26. It is to be noted that, in a case where anotherorganic layer (e.g., electron-blocking layer, etc.) is formed on orunder the organic photoelectric conversion layer 22 as described above,it is desirable to continuously form the other organic layer (by avacuum-consistent process) in a vacuum process. In addition, the methodof forming the organic photoelectric conversion layer 22 is notnecessarily limited to the method using a vacuum deposition method, butanother method, for example, a spin-coating technique, a printingtechnique, or the like may be used. Lastly, the optical members such asthe planarization layer and the on-chip lens 52 are disposed. Thus, thephotoelectric converter 10 illustrated in FIG. 1 is completed.

When light enters the organic photoelectric conversion section 20through the on-chip lens 52 in the photoelectric converter 10, the lightpasses through the organic photoelectric conversion section 20, theinorganic photoelectric conversion section (or the inorganicphotoelectric conversion section 32R) in this order, and the respectivepieces of light of green, blue, and red are photoelectrically convertedin the passing process. The following describes an operation ofacquiring signals of the respective colors.

(Acquisition of Green Color Signal by Organic Photoelectric ConversionSection 20)

First, the green light of the pieces of light inputted into thephotoelectric converter 10 is selectively detected (absorbed) andphotoelectrically converted by the organic photoelectric conversionsection 20. The following describes the pixel P1, but the same appliesto the pixel P2.

The organic photoelectric conversion section 20 is coupled to a gateGamp of the amplifier transistor AMP and the floating diffusion FD1 (FD2in the pixel P2) through the through electrode 34. Thus, the electron ofthe electron-hole pair generated in the organic photoelectric conversionsection 20 is taken out from the lower electrode 21 side, transferred tothe second surface 30B side of the semiconductor substrate 30 throughthe through electrode 34, and accumulated in the floating diffusion FD1.At the same time as this, the amplifier transistor AMP modulates theamount of the charges generated in the organic photoelectric conversionsection 20 into a voltage.

In addition, the reset gate Grst of the reset transistor RST is disposednext to the floating diffusion FD1. This causes the reset transistor RSTto reset the charges accumulated in the floating diffusion FD1.

Here, the organic photoelectric conversion section 20 is coupled to notonly the amplifier transistor AMP, but also the floating diffusion FD1through the through electrode 34, making it possible for the resettransistor RST to easily reset the charges accumulated in the floatingdiffusion FD1.

In contrast, in a case where the through electrode 34 and the floatingdiffusion FD1 are not coupled, it is difficult to reset the chargesaccumulated in the floating diffusion FD1, resulting in application of alarge voltage to pull out the charges to the upper electrode 23 side.Accordingly, there is a possibility that the organic photoelectricconversion layer 22 is damaged. In addition, a structure that enablesresetting in a short period of time leads to increased dark-time noiseand results in a trade-off. This structure is thus difficult.

FIG. 13 illustrates an operation example of the photoelectric converter10. (A) illustrates a potential at the accumulation electrode 21B, (B)illustrates a potential at the floating diffusion FD1 (readout electrode21A), and (C) illustrates a potential at the gate (Gsel) of the resettransistor TR1rst. In the photoelectric converter 10, voltages areindividually applied to the readout electrode 21A and the accumulationelectrode 21B.

In the photoelectric converter 10, in the accumulation period, apotential V1 is applied to the readout electrode 21A from the drivecircuit, and a potential V2 is applied to the accumulation electrode21B. Here, it is assumed that the potentials V1 and V2 satisfy V2>V1.This causes charges (here, electrons) generated by photoelectricconversion to be drawn to the accumulation electrode 21B, andaccumulated in the region of the organic photoelectric conversion layer22 opposed to the accumulation electrode 21B (accumulation period). Inthis regard, the value of a potential in the region of the organicphotoelectric conversion layer 22 opposed to the accumulation electrode21B becomes more negative with the lapse of time of photoelectricconversion. It is to be noted that holes are sent from the upperelectrode 23 to the drive circuit.

In the photoelectric converter 10, a reset operation is performed at alater stage of the accumulation period. Specifically, at a timing t1, ascanning section changes the voltage of a reset signal RST from a lowlevel to a high level. This turns on the reset transistor TR1rst in theunit pixel P. As a result, the voltage of the floating diffusion FD1 isset at the power supply voltage VDD, and the voltage of the floatingdiffusion FD1 is reset (reset period).

After the reset operation is completed, the charges are read out.Specifically, at a timing t 2, a potential V3 is applied to the readoutelectrode 21A from the drive circuit, and a potential V4 is applied tothe accumulation electrode 21B. Here, it is assumed that the potentialsV3 and V4 satisfy V3<V4. This causes the charges (here, electrons)accumulated in the region corresponding to the accumulation electrode21B to be read out from the readout electrode 21A to the floatingdiffusion FD1. That is, the charges accumulated in the organicphotoelectric conversion layer 22 are read out by the controller(transfer period).

After the readout operation is completed, the potential V1 is appliedfrom the drive circuit to the readout electrode 21A, and the potentialV2 is applied to the accumulation electrode 21B again. This causescharges (here, electrons) generated by photoelectric conversion to bedrawn to the accumulation electrode 21B, and accumulated in the regionof the organic photoelectric conversion layer 22 opposed to theaccumulation electrode 21B (accumulation period).

(Acquisition of Blue Color Signal and Red Color Signal by InorganicPhotoelectric Conversion Sections 32B and 32R)

Subsequently, the blue light and the red light of the pieces of lightpassing through the organic photoelectric conversion section 20 arerespectively absorbed in sequence and photoelectrically converted in theinorganic photoelectric conversion section 32B and the inorganicphotoelectric conversion section 32R. In the inorganic photoelectricconversion section 32B, electrons corresponding to the inputted bluelight are accumulated in the n region of the inorganic photoelectricconversion section 32B, and the accumulated electrons are transferred tothe floating diffusion FD3 by the transfer transistor Tr3. Similarly, inthe inorganic photoelectric conversion section 32R, electronscorresponding to the inputted red light are accumulated in the n regionof the inorganic photoelectric conversion section 32R, and theaccumulated electrons are transferred to the floating diffusion FD4 bythe transfer transistor Tr4.

1-3. Workings and Effects

A so-called longitudinal spectral type solid-state imaging device inwhich an inorganic photoelectric conversion section provided in theabove-described semiconductor substrate (Si substrate) and an organicphotoelectric conversion film formed on the back surface side of thesemiconductor substrate are stacked absorbs a first light component withthe organic photoelectric conversion film and absorbs the other lightcomponents with the inorganic photoelectric conversion section(photodiode; PD) in the Si substrate. The Si substrate has a highabsorptivity on the light irradiation surface side. It is thus difficultto detect a light component with no color mixture if the colors of lightpassing through the organic photoelectric conversion film are separatedin the depth direction of the Si substrate.

In contrast, in the present embodiment, the optical filters 51 aredisposed between the organic photoelectric conversion sections 20 andthe inorganic photoelectric conversion sections 32 (32B and 32R). Thismakes it possible to remove an unnecessary wavelength component ofwavelengths passing through the organic photoelectric conversion section20. In other words, it is possible to selectively irradiate theinorganic photoelectric conversion sections 32 (32B and 32R) withdesired wavelength components.

As described above, the optical filters 51 (51B and 51R) are disposedbetween the organic photoelectric conversion sections 20 and theinorganic photoelectric conversion sections 32 (32B and 32R) of thephotoelectric converters 10 according to the present embodiment. Thismakes it possible to remove unnecessary wavelength components andselectively irradiate the inorganic photoelectric conversion sections 32(32B and 32R) with desired wavelength components. This makes it possibleto improve spectral characteristics.

Next, modification examples 1 to 3 are described. Components similar tothose of the above-described embodiment are denoted with the samereference numerals below, and descriptions thereof are omitted asappropriate.

2. MODIFICATION EXAMPLES 2-1. Modification Example 1

Each of FIGS. 10A and 10B illustrates an example of the disposition ofthe optical filters 51 (51B, 51R, and 51W) in the photoelectricconverters 10A according to a modification example (modificationexample 1) of the present disclosure. As with the photoelectricconverter 10 according to the above-described embodiment, this thephotoelectric converter 10A is included in one pixel (unit pixel P) in asolid-state imaging device (solid-state imaging device 1; see FIG. 26 )such as a CMOS image sensor used in an electronic apparatus such as adigital still camera or a video camera, for example. The photoelectricconverter 10A according to the present modification example is differentfrom that of the above-described embodiment in that the optical filter51W which transmits at least visible light is added as the opticalfilter 51.

As in the above-described embodiment, the four photoelectric converters10A are included in one pixel unit Pu in the present modificationexample. The three types of optical filters 51B, 51R, and 51W are usedfor the four photoelectric converters 10A. In a case where the threetypes of optical filters 51B, 51R, and 51W are disposed in the fourphotoelectric converters 10A in this way, optical filters of one type(optical filters 51W in FIG. 10A) may be disposed side by side, forexample in the X axis direction, for example, as illustrated in FIG.10A. The two remaining types of optical filters (optical filters 51B and51R in FIG. 10A) may be alternately disposed, for example, in the X axisdirection. Alternatively, for example, as illustrated in FIG. 10B,optical filters of one type (optical filters 51W in FIG. 10B) may bedisposed, for example, on one diagonal line, and the two remaining typesof optical filters (optical filters 51B and 51R in FIG. 10B) may bedisposed, for example, on another diagonal line.

For example, a pixel in which the optical filters 51W that transmitvisible light are disposed on the inorganic photoelectric conversionsections 32 are added to the pixel units Pu in addition to pixelsincluding the optical filters 51B and 51R on the inorganic photoelectricconversion sections 32B and 32R in this way, thereby allowing theinorganic photoelectric conversion sections 32 to be irradiated withmore light. This makes it possible to increase an S (Signal)/N (Noise)ratio in a low illuminance environment while improving a spectralcharacteristic.

2-2. Modification Example 2

FIG. 11 schematically illustrates the positional relationship betweenmain parts obtained by combining four pixel units Pu in each of whichfour photoelectric converters 60 according to a modification example(modification example 2) of the present disclosure are disposed in tworows and two columns. As with the photoelectric converter 10 accordingto the above-described embodiment, the photoelectric converter 60 isincluded in one pixel (unit pixel P) in a solid-state imaging device(solid-state imaging device 1; see FIG. 26 ) such as a CMOS image sensorused in an electronic apparatus such as a digital still camera or avideo camera, for example. The photoelectric converter 60 according tothe present modification example is different from that of theabove-described embodiment in that an organic photoelectric conversionlayer 62 is configured as a photoelectric conversion layer that, forexample, absorbs infrared light (IR) and transmits visible light, andany one of the inorganic photoelectric conversion section 32R thatabsorbs red light in addition to an inorganic photoelectric conversionsection 32G that absorbs green light and the inorganic photoelectricconversion section 32B that absorbs blue light in the semiconductorsubstrate 30 is provided.

FIG. 12A illustrates an example of the disposition of the opticalfilters 51 (51R, 51G, and 51B) disposed in the pixel units Pu. The pixelunits Pu each include, for example, the four pixels P1, P2, P3, and P4.As in the above-described modification example 1, for example, opticalfilters of one type (optical filters 51G in FIG. 12A) among the opticalfilters 51R, 51G, and 51B are disposed, for example, on one diagonalline, and the two remaining types of optical filters (optical filters51R and 51B in FIG. 12B) are disposed, for example, on another diagonalline. Disposing these four pixels P in two rows and two columns makesthe optical filters 51R, 51G, and 51B disposed in a so-called Bayerarray. In addition, although not illustrated, optical filters of onetype (e.g., optical filters 51G) may be disposed side by side, forexample, in the X axis direction, and the two remaining types of opticalfilters (e.g., optical filters 51R and 51B) may be alternately disposed,for example, in the X axis direction as in the modification example 1.

FIG. 12B illustrates an example of the disposition of the four types ofoptical filters 51R, 51G, 51B, and 51W disposed in the pixel units Pu.In FIG. 12B, in addition to the three types of RGB optical filters 51R,51G, and 51B, the optical filter 51W is added that transmits visiblelight. Each of the optical filters is disposed in one pixel unit Pu.

2-3. Modification Example 3

FIG. 13 schematically illustrates a stacked configuration of respectivemain parts of photoelectric converters (photoelectric converters 70)according to a modification example (modification example 3) of thepresent disclosure. As in the above-described embodiment, thephotoelectric converter 70 is included in one pixel (unit pixel P) in asolid-state imaging device (solid-state imaging device 1; see FIG. 26 )such as a CMOS image sensor used in an electronic apparatus such as adigital still camera or a video camera, for example. The presentmodification example is different from the above-described embodimentand modification examples 1 and 2 in that there are providedlight-shielding sections between the inorganic photoelectric conversionsections 32B and the inorganic photoelectric conversion sections 32Rthat absorb respective pieces of light in wavelength bands differentfrom each other in adjacent pixels Pb1, Pr1, Pb2, and Pr2.

FIG. 14A schematically illustrates a planar configuration of respectivesections of four photoelectric converters 70A provided in the respectivepixels P (Pb1, Pr1, Pb2, and Pr2) disposed in two rows and two columns.FIG. 14B schematically illustrates a cross-sectional configuration takenalong a line I-I illustrated in FIG. 14A, and FIG. 14C schematicallyillustrates a cross-sectional configuration taken along a line II-IIillustrated in FIG. 14A. The photoelectric converters 70A are an exampleof a specific configuration of the respective sections of the twophotoelectric converters 70 illustrated in FIG. 13 . For example, thepixel Pb1 and pixel Pb2 (blue pixels) that absorb blue light and thepixels Pr1 and pixel Pr2 (red pixels) that absorb red light are disposedin one pixel unit Pu in a checkerboard pattern. In this pixel unit Pu,readout electrodes 71A (71A1, 71A2, 71A3, and 71A4) and throughelectrodes 74 (74A, 74B, 74C, and 74D) coupled thereto are provided, forexample, at respective corners of the rectangular pixels Pb1, Pr1, Pb2,and Pr2. Wiring lines 39B1 and 39B2 coupled to accumulation electrodes71B (71B1, 71B2, 71B3, and 71B4) are provided as common wiring lines ofthe pixels Pb1 and Pr1 and pixels Pb2 and Pr2 that are adjacent in the Xaxis direction. In these photoelectric converters 70A, for example, thethrough electrodes 74A, 74B, 74C, and 74D and the wiring lines 39B1 and39B2 are formed by using materials each having a light-shieldingproperty, and these are included in the light-shielding sections. It isto be noted that the materials of the wiring lines 39B1 and 39B2 includea metallic material such as tungsten (W), titanium nitride (TiN),titanium (Ti), or copper (Cu).

FIG. 15A schematically illustrates a planar configuration of fourphotoelectric converters 70B provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 15Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 15A, and FIG. 15C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 15A. The photoelectric converters 70B are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70A, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pr1 and pixel Pr2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. In this pixel unit Pu, the readout electrodes 71A(71A1, 71A2, 71A3, and 71A4) and the through electrodes 74 (74A, 74B,74C, and 74D) coupled thereto are provided, for example, on respectivesides of the rectangular pixels Pb1, Pr1, Pb2, and Pr2. The wiring lines39B1 and 39B2 are omitted. In these photoelectric converters 70B, forexample, the through electrodes 74A, 74B, 74C, and 74D are formed byusing materials each having a light-shielding property, and these areincluded in the light-shielding sections.

FIG. 16A schematically illustrates a planar configuration of fourphotoelectric converters 70C provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 16Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 16A, and FIG. 16C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 16A. The photoelectric converters 70C are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70A, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pr1 and pixel Pr2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. In this pixel unit Pu, the readout electrodes 71A(71A1, 71A2, 71A3, and 71A4) and the through electrodes 74 (74A, 74B,74C, and 74D) coupled thereto are provided, for example, on respectivesides of the rectangular pixels Pb1, Pr1, Pb2, and Pr2. The wiring lines39B1 and 39B2 coupled to the accumulation electrodes 71B (71B1, 71B2,71B3, and 71B4) are provided as common wiring lines of the pixels Pb1and Pr1 and pixels Pb2 and Pr2 that are adjacent in the X axisdirection. In these photoelectric converters 70C, for example, thethrough electrodes 74A, 74B, 74C, and 74D and the wiring lines 39B1 and39B2 are formed by using materials each having a light-shieldingproperty, and these are included in the light-shielding sections.

FIG. 17A schematically illustrates a planar configuration of fourphotoelectric converters 70D provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 17Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 17A, and FIG. 17C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 17A. The photoelectric converters 70D are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70A, for example, the pixel Pr1 and pixel Pr2 (blue pixels)that absorb blue light and the pixels Pr1 and pixel Pr2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. In this pixel unit Pu, the readout electrodes 71A(71A1, 71A2, 71A3, and 71A4) and the through electrodes 74 (74A, 74B,74C, and 74D) coupled thereto are provided, for example, on respectivesides of the rectangular pixels Pb1, Pr1, Pb2, and Pr2. The wiring lines39B1 and 39B2 coupled to the accumulation electrodes 71B (71B1, 71B2,71B3, and 71B4) are provided as common wiring lines of the pixels Pb1and Pr1 and pixels Pb2 and Pr2 that are adjacent in the X axisdirection, and each have a stacked structure (e.g., 3-layer structure).In these photoelectric converters 70D, for example, the throughelectrodes 74A, 74B, 74C, and 74D and the wiring lines 39B1 and 39B2 areformed by using materials each having a light-shielding property, andthese are included in the light-shielding sections.

FIG. 18A schematically illustrates a planar configuration of fourphotoelectric converters 70E provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 18Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 18A, and FIG. 18C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 18A. The photoelectric converters 70E are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70A, for example, the pixel Pr1 and pixel Pr2 (blue pixels)that absorb blue light and the pixels Pr1 and pixel Pr2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. In this pixel unit Pu, the readout electrodes 71A(71A1, 71A2, 71A3, and 71A4) and the through electrodes 74 (74A, 74B,74C, and 74D) coupled thereto are provided, for example, at respectivecorners of the rectangular pixels Pb1, Pr1, Pb2, and Pr2. For example,the readout electrodes 71A (71A1, 71A2, 71A3, and 71A4) and the throughelectrodes 74 (74A, 74B, 74C, and 74D) coupled thereto are collectivelyprovided in the middle portion of the adjacent pixels. The wiring lines39B1 and 39B2 coupled to the accumulation electrodes 71B (71B1, 71B2,71B3, and 71B4) are provided to a pair of opposite sides of one ofpixels including, for example, the four pixels Pb1, Pr1, Pb2, and Pr2 ascommon wiring lines of the pixels Pb1 and Pr1 and pixels Pb2 and Pr2that are adjacent in the X axis direction. In these photoelectricconverters 70E, for example, the through electrodes 74A, 74B, 74C, and74D and the wiring lines 39B1 and 39B2 are formed by using materialseach having a light-shielding property, and these are included in thelight-shielding sections.

FIG. 19A schematically illustrates a planar configuration of fourphotoelectric converters 70F provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 19Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 19A, and FIG. 19C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 19A. The photoelectric converters 70F are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . For example, the pixel Pr1 andpixel Pr2 (blue pixels) that absorb blue light and the pixels Pr1 andpixel Pr2 (red pixels) that absorb red light are disposed in one pixelunit Pu in a checkerboard pattern. As with the photoelectric converters70E, in this pixel unit Pu, the readout electrodes 71A (71B1, 71B2,71B3, and 71B4) are collectively provided, for example, at respectivecorners of the rectangular pixels Pb1, Pr1, Pb2, and Pr2, for example,in the middle portion of the adjacent pixels. The wiring lines 39B1 and39B2 coupled to the accumulation electrodes 71B (71B1, 71B2, 71B3, and71B4) are provided as common wiring lines of the pixels Pb1 and Pr1 andpixels Pb2 and Pr2 that are adjacent in the X axis direction, and eachhave a stacked structure (e.g., 3-layer structure). In thesephotoelectric converters 70F, for example, the through electrodes 74A,74B, 74C, and 74D and the wiring lines 39B1 and 39B2 are formed by usingmaterials each having a light-shielding property, and these are includedin the light-shielding sections.

FIG. 20A schematically illustrates a planar configuration of fourphotoelectric converters 70G provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 20Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 20A, and FIG. 20C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 20A. The photoelectric converters 70G are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . For example, the pixel Pr1 andpixel Pr2 (blue pixels) that absorb blue light and the pixels Pr1 andpixel Pr2 (red pixels) that absorb red light are disposed in one pixelunit Pu in a checkerboard pattern. In this pixel unit Pu, as with thephotoelectric converters 70E, the readout electrodes 71A (71B1, 71B2,71B3, and 71B4) and the through electrodes 74 (74A, 74B, 74C, and 74D)coupled thereto are provided, for example, at respective corners of therectangular pixels Pb1, Pr1, Pb2, and Pr2. For example, the readoutelectrodes 71A (71B1, 71B2, 71B3, and 71B4) and the through electrodes74 (74A, 74B, 74C, and 74D) coupled thereto are collectively provided inthe middle portion of the one pixel unit Pu.

In the pixel unit Pu illustrated in FIG. 20A or the like, the wiringlines 39B1 and 39B2 are provided at peripheral edges to surround therespective pixels P (Pb1, Pr1, Pb2, and Pr2). As with the photoelectricconverters 70E illustrated in FIG. 18A, the wiring lines 39B1 and 39B2are coupled to the accumulation electrodes 71B (71B1, 71B2, 71B3, and71B4), and formed, for example, as common wiring lines between thepixels Pb1 and Pr1 and between the pixels Pb2 and Pr2. The pixels Pb1and Pr1, and the pixels Pb2 and Pr2 are adjacent in the X axisdirection. The respective wiring lines 39B1 and 39B2 are provided withextension sections 39 b 1 and 39 b 2 extending in the Z axis directionbetween the pixels adjacent in the X axis direction. It is to be notedthat the extension section 39 b 1 and the extension section 39 b 2extending toward each other from the wiring lines 39B1 and 39B2 areseparated from each other, and electrically insulated. In addition, forexample, the extension section 39 b 2 of the wiring line 39B2 isprovided with extension sections 39 b 3 between the pixel Pr1 and thepixel Pb2 and between the pixel Pb1 and the pixel Pr2. The tip sectionsof the extension sections 39 b 3 extend near the middle section of thepixel unit Pu, for example, in the vicinity of the through electrodes74A, 74B, 74C, and 74D. The pixel Pr1 and the pixel Pb2, and the pixelPb1 and the pixel Pr2 are adjacent in the Z axis direction. In thephotoelectric converters 70G, for example, the through electrodes 74A,74B, 74C, and 74D and the wiring lines 39B1 and 39B2 including therespective extension sections 39 b 1, 39 b 2, and 39 b 3 are formed byusing materials each having a light-shielding property, and these areincluded in the light-shielding sections. This allows each photoelectricconverter 70G to prevent not only light from leaking from the X axisdirection, but also light from leaking from the Y axis direction. Thatis, it is possible to improve a spectral characteristic more than theabove-described photoelectric converters 70A to 70F do.

FIG. 21A schematically illustrates a planar configuration of fourphotoelectric converters 70H provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 21Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 21A, and FIG. 21C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 21A. The photoelectric converters 70H are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . For example, the pixel Pb1 andpixel Pb2 (blue pixels) that absorb blue light and the pixels Pr1 andpixel Pr2 (red pixels) that absorb red light are disposed in one pixelunit Pu in a checkerboard pattern. In this pixel unit Pu, as with thephotoelectric converters 70E, the readout electrodes 71A (71A1, 71A2,71A3, and 71A4) and the through electrodes 74 (74A, 74B, 74C, and 74D)coupled thereto are provided, for example, at respective corners of thepixels Pb1, Pr1, Pb2, and Pr2. For example, the readout electrodes 71A(71A1, 71A2, 71A3, and 71A4) and the through electrodes 74 (74A, 74B,74C, and 74D) coupled thereto are collectively provided in the middleportion of the one pixel unit Pu.

In the pixel unit Pu illustrated in FIG. 21A or the like, as with thephotoelectric converters 70G, the wiring lines 39B1 and 39B2 areprovided at peripheral edges to surround the respective pixels P (Pb1,Pr1, Pb2, and Pr2). The respective wiring lines 39B1 and 39B2 areformed, for example, as common wiring lines between the pixels Pb1 andPr1 and between the pixels Pb2 and Pr2. The pixels Pb1 and Pr1, and thepixels Pb2 and Pr2 are adjacent in the X axis direction. In addition,the respective wiring lines 39B1 and 39B2 are provided with extensionsections 39 b 1 and 39 b 2 extending in the Z axis direction between thepixels adjacent in the X axis direction. The extension section 39 b 1and the extension section 39 b 2 are separated from each other, andelectrically insulated. Further, the extension section 39 b 2 of thewiring line 39B2 is provided with extension sections 39 b 3 between thepixel Pr1 and the pixel Pb2 and between the pixel Pb1 and the pixel Pr2.The tip sections of the extension sections 39 b 3 extend near the middlesection of the pixel unit Pu, for example, in the vicinity of thethrough electrodes 74A, 74B, 74C, and 74D. The pixel Pr1 and the pixelPb2, and the pixel Pb1 and the pixel Pr2 are adjacent in the Z axisdirection. In the photoelectric converters 70H, for example, the throughelectrodes 74A, 74B, 74C, and 74D and the wiring lines 39B1 and 39B2including the respective extension sections 39 b 1, 39 b 2, and 39 b 3are each formed by using a material having a light-shielding property,and each have a stacked structure (e.g., 3-layer structure). This makesit possible to further prevent light from leaking from an adjacent pixelthan the above-described photoelectric converter 70G does.

FIG. 22A schematically illustrates a planar configuration of fourphotoelectric converters 70I provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 22Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 22A, and FIG. 22C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 22A. The photoelectric converters 70I are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70A, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pb1 and pixel Pb2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. In this pixel unit Pu, the readout electrodes 71Aand the through electrodes 74 coupled thereto are provided, for example,at the respective corners of the pixels Pb1, Pr1, Pb2, and Pr2 in themiddle portion of the pixels P, for example, as one shared electrode ofthe adjacent pixels.

In the pixel unit Pu illustrated in FIG. 22A or the like, the wiringlines 39B1, 39B2, 39B3, and 39B4 are formed as wiring lines coupled tothe accumulation electrodes 71B (71B1, 71B2, 71B3, and 71B4). The wiringlines 39B1, 39B2, 39B3, and 39B4 are independent from each other, andextend the pixels Pb1 and Pr1 and the pixels Pb2 and Pr2. The pixels Pb1and Pr1 and the pixels Pb2 and Pr2 are adjacent in the X axis direction.Specifically, for example, the wiring line 39B1 and the wiring line 39B3are formed side by side in the adjacent pixels Pb1 and Pr1. For example,the accumulation electrode 71B1 is coupled to the wiring line 39B1, andthe accumulation electrode 71B2 is coupled to the wiring line 39B3. Thewiring line 39B2 and the wiring line 39B4 are formed side by side in theadjacent pixels Pb2 and Pr2. For example, the accumulation electrode71B3 is coupled to the wiring line 39B2, and the accumulation electrode71B4 is coupled to the wiring line 39B4. In the photoelectric converters70I, for example, the through electrodes 74 and the wiring lines 39B1,39B2, 39B3, and 39B4 are formed by using materials each having alight-shielding property, and these are included in the light-shieldingsections.

FIG. 23A schematically illustrates a planar configuration of fourphotoelectric converters 70J provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 23Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 23A, and FIG. 23C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 23A. The photoelectric converters 70J are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70E, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pb1 and pixel Pb2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. The readout electrodes 71A and the throughelectrodes 74 coupled thereto are provided, for example, at therespective corners of the pixels Pb1, Pr1, Pb2, and Pr2 in the middleportion of the pixels P, for example, as one shared electrode of theadjacent pixels.

In the pixel unit Pu illustrated in FIG. 23A or the like, as with thephotoelectric converters 70I, the wiring lines 39B1, 39B2, 39B3, and39B4 are formed as wiring lines coupled to the accumulation electrodes71B (71B1, 71B2, 71B3, and 71B4). The wiring lines 39B1, 39B2, 39B3, and39B4 are independent from each other, and extend the pixels Pb1 and Pr1and the pixels Pb2 and Pr2. The pixels Pb1 and Pr1 and the pixels Pb2and Pr2 are adjacent in the X axis direction. Specifically, for example,the wiring line 39B1 and the wiring line 39B3 are formed side by side inthe adjacent pixels Pb1 and Pr1. For example, the accumulation electrode71B1 is coupled to the wiring line 39B1, and the accumulation electrode71B2 is coupled to the wiring line 39B3. The wiring line 39B2 and thewiring line 39B4 are formed side by side in the adjacent pixels Pb2 andPr2. For example, the accumulation electrode 71B3 is coupled to thewiring line 39B2, and the accumulation electrode 71B4 is coupled to thewiring line 39B4. In the photoelectric converters 70J, throughelectrodes and the wiring lines 39B1, 39B2, 39B3, and 39B4 are includedin the light-shielding sections. Further, the wiring lines 39B1, 39B2,39B3, and 39B4 each have a stacked structure (e.g., 3-layer structure).This makes it possible to further prevent light from leaking from anadjacent pixel than the above-described photoelectric converter 701does.

FIG. 24A schematically illustrates a planar configuration of fourphotoelectric converters 70K provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 24Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 24A, and FIG. 24C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 24A. The photoelectric converters 70K are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70E, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pb1 and pixel Pb2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. The readout electrodes 71A and the throughelectrodes 74 coupled thereto are provided, for example, at therespective corners of the pixels Pb1, Pr1, Pb2, and Pr2 in the middleportion of the pixels P, for example, as one shared electrode of theadjacent pixels.

In the pixel unit Pu illustrated in FIG. 24A or the like, as with thephotoelectric converters 70I, the wiring lines 39B1, 39B2, 39B3, and39B4 are formed as wiring lines coupled to the accumulation electrodes71B (71B1, 71B2, 71B3, and 71B4). The wiring lines 39B1, 39B2, 39B3, and39B4 are independent from each other, and extend the pixels Pb1 and Pr1and the pixels Pb2 and Pr2. The pixels Pb1 and Pr1 and the pixels Pb2and Pr2 are adjacent in the X axis direction. Specifically, for example,the wiring line 39B1 and the wiring line 39B3 are formed side by side inthe adjacent pixels Pb1 and Pr1. For example, the accumulation electrode71B1 is coupled to the wiring line 39B1, and the accumulation electrode71B2 is coupled to the wiring line 39B3. The wiring line 39B2 and thewiring line 39B4 are formed side by side in the adjacent pixels Pb2 andPr2. For example, the accumulation electrode 71B3 is coupled to thewiring line 39B2, and the accumulation electrode 71B4 is coupled to thewiring line 39B4. Further, as in the photoelectric converters 70G, theextension sections 39 b 1, 39 b 2, and 39 b 3 are provided at theperipheral edges in the photoelectric converters 70K to surround therespective pixels P (Pb1, Pr1, Pb2, and Pr2). In photoelectricconverters 70K, the extension section 39 b 1 is formed by being drawn,for example, from the wiring line 39B3 provided inside among the wiringline 39B1 and the wiring line 39B3 formed side by side. The extensionsections 39 b 2 and 39 b 3 are formed by being drawn, for example, fromthe wiring line 39B4 provided inside among the wiring line 39B2 and thewiring line 39B4 formed side by side.

FIG. 25A schematically illustrates a planar configuration of fourphotoelectric converters 70L provided in the respective pixels P (Pb1,Pr1, Pb2, and Pr2) disposed in two rows and two columns. FIG. 25Bschematically illustrates a cross-sectional configuration taken along aline I-I illustrated in FIG. 25A, and FIG. 25C schematically illustratesa cross-sectional configuration taken along a line II-II illustrated inFIG. 25A. The photoelectric converters 70L are another example of aspecific configuration of the respective sections of the photoelectricconverters 70 illustrated in FIG. 13 . As with the photoelectricconverters 70E, for example, the pixel Pb1 and pixel Pb2 (blue pixels)that absorb blue light and the pixels Pb1 and pixel Pb2 (red pixels)that absorb red light are disposed in one pixel unit Pu in acheckerboard pattern. The readout electrodes 71A and the throughelectrodes 74 coupled thereto are provided, for example, at therespective corners of the pixels Pb1, Pr1, Pb2, and Pr2 in the middleportion of the pixels P, for example, as one shared electrode of theadjacent pixels.

In the pixel unit Pu illustrated in FIG. 25A or the like, as with thephotoelectric converters 70I, the wiring lines 39B1, 39B2, 39B3, and39B4 are formed as wiring lines coupled to the accumulation electrodes71B (71B1, 71B2, 71B3, and 71B4). The wiring lines 39B1, 39B2, 39B3, and39B4 are independent from each other, and extend the pixels Pb1 and Pr1and the pixels Pb2 and Pr2. The pixels Pb1 and Pr1 and the pixels Pb2and Pr2 are adjacent in the X axis direction. Specifically, for example,the wiring line 39B1 and the wiring line 39B3 are formed side by side inthe adjacent pixels Pb1 and Pr1. For example, the accumulation electrode71B1 is coupled to the wiring line 39B1, and the accumulation electrode71B2 is coupled to the wiring line 39B3. The wiring line 39B2 and thewiring line 39B4 are formed side by side in the adjacent pixels Pb2 andPr2. For example, the accumulation electrode 71B3 is coupled to thewiring line 39B2, and the accumulation electrode 71B4 is coupled to thewiring line 39B4. Further, as in the photoelectric converters 70G, theextension sections 39 b 1, 39 b 2, and 39 b 3 are provided at theperipheral edges in the photoelectric converters 70K to surround therespective pixels P (Pb1, Pr1, Pb2, and Pr2). In photoelectricconverters 70K, the extension section 39 b 1 is formed by being drawn,for example, from the wiring line 39B3 provided inside among the wiringline 39B1 and the wiring line 39B3 formed side by side. The extensionsections 39 b 2 and 39 b 3 are formed by being drawn, for example, fromthe wiring line 39B4 provided inside among the wiring line 39B2 and thewiring line 39B4 formed side by side. Further, these wiring lines 39B1,39B2, 39B3, and 39B4, and extension sections 39 b 1, 39 b 2, and 39 b 3each have a stacked structure (e.g., 3-layer structure) as in thephotoelectric converters 70H and 70J.

As described above, at least the respective through electrodes 74 (74A,74B, 74C, and 74D) of the adjacent inorganic photoelectric conversionsections 32 (e.g., inorganic photoelectric conversion sections 32B and32R) that absorb respective pieces of light in wavelength bandsdifferent from each other, the wiring lines 39B1 and 39B2 in theinter-layer insulation layer 26 provided on the light incidence surfaceS1 side of the semiconductor substrate 30, or the like of thephotoelectric converters 70 according to the present modificationexample are formed by using materials each having a light-shieldingproperty. This makes it possible to suppress a color mixture betweenadjacent pixels, and further improve a spectral characteristic.

3. APPLICATION EXAMPLES Application Example 1

FIG. 26 illustrates, for example, an overall configuration of thesolid-state imaging device 1 including the photoelectric converter 10described in the above-described embodiment for each pixel. Thissolid-state imaging device 1 is a CMOS image sensor. The solid-stateimaging device 1 includes, on the semiconductor substrate 11, the pixelsection 1 a as an imaging area, and a peripheral circuit unit 130 in aperipheral region of this pixel section 1 a. The peripheral circuit unit130 includes, for example, a row scanning section 131, a horizontalselection section 133, a column scanning section 134, and a systemcontrol section 132.

The pixel section 1 a includes, for example, a plurality of unit pixelsP (corresponding to, for example, the photoelectric converters 10) thatare two-dimensionally disposed in a matrix. In these unit pixels P,pixel drive lines Lread (specifically, row selection lines and resetcontrol lines) are disposed in each of pixel rows, for example, andvertical signal lines Lsig are disposed in each of pixel columns. Thepixel drive lines Lread are each used to transmit drive signals forreading signals from pixels. One end of each of the pixel drive linesLread is coupled to the output end of the row scanning section 131corresponding to each row.

The row scanning section 131 is a pixel drive section that includes ashift register, an address decoder, and the like, and drives each of theunit pixels P of the pixel section 1 a on a row basis, for example. Asignal outputted from each of the unit pixels P of the pixel rowsselected and scanned by the row scanning section 131 is supplied to thehorizontal selection section 133 through each of the vertical signallines Lsig. The horizontal selection section 133 includes an amplifier,a horizontal selection switch, and the like provided for each of thevertical signal lines Lsig.

The column scanning section 134 includes a shift register, an addressdecoder, and the like, and drives each of the horizontal selectionswitches of the horizontal selection section 133 in sequence whilescanning the horizontal selection switches. Selection and scanning bythis column scanning section 134 output signals of the respective pixelstransmitted through each of the vertical signal lines Lsig to ahorizontal signal line 135 in sequence, and transmits the signals to theoutside of the semiconductor substrate 11 through the horizontal signalline 135.

Circuit portions including the row scanning section 131, the horizontalselection section 133, the column scanning section 134, and thehorizontal signal line 135 may be formed directly on the semiconductorsubstrate 11 or may be disposed on external control IC. In addition,those circuit portions may be formed on another substrate coupled by acable or the like.

The system control section 132 receives, for example, a clock, data foran instruction about an operation mode, and the like. The clock and thedata are supplied from the outside of the semiconductor substrate 11. Inaddition, the system control section 132 outputs data such as internalinformation of the solid-state imaging device 1. The system controlsection 132 further includes a timing generator that generates varioustiming signals, and controls the driving of the peripheral circuit suchas the row scanning section 131, the horizontal selection section 133,and the column scanning section 134 on the basis of the various timingsignals generated by the timing generator.

Application Example 2

The above-described solid-state imaging device 1 is applicable to, forexample, any type of electronic apparatus (solid-state imaging device)having an imaging function. The electronic apparatus (solid-stateimaging device) includes a camera system such as a digital still cameraand a video camera, a mobile phone having the imaging function, and thelike. FIG. 27 illustrates a schematic configuration of a camera 2 as anexample thereof. This camera 2 is, for example, a video camera that isable to capture a still image or a moving image. The camera 2 includesthe solid-state imaging device 1, an optical system (optical lens) 310,a shutter device 311, a drive section 313 that drives the solid-stateimaging device 1 and the shutter device 311, and a signal processingsection 312.

The optical system 310 guides image light (incident light) from anobject to the pixel section 1 a of the solid-state imaging device 1.This optical system 310 may include a plurality of optical lenses. Theshutter device 311 controls a period of time in which the solid-stateimaging device 1 is irradiated with light and a period of time in whichlight is blocked. The drive section 313 controls a transfer operation ofthe solid-state imaging device 1 and a shutter operation of the shutterdevice 311. The signal processing section 312 performs various types ofsignal processing on signals outputted from the solid-state imagingdevice 1. An image signal Dout subjected to the signal processing isstored in a storage medium such as a memory or outputted to a monitor orthe like.

Application Example 3 <Example of Application to In-Vivo InformationAcquisition System>

Further, the technology (present technology) according to the presentdisclosure is applicable to various products. For example, thetechnology according to the present disclosure may be applied to anendoscopic surgery system.

FIG. 28 is a block diagram depicting an example of a schematicconfiguration of an in-vivo information acquisition system of a patientusing a capsule type endoscope, to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

The in-vivo information acquisition system 10001 includes a capsule typeendoscope 10100 and an external controlling apparatus 10200.

The capsule type endoscope 10100 is swallowed by a patient at the timeof inspection. The capsule type endoscope 10100 has an image pickupfunction and a wireless communication function and successively picks upan image of the inside of an organ such as the stomach or an intestine(hereinafter referred to as in-vivo image) at predetermined intervalswhile it moves inside of the organ by peristaltic motion for a period oftime until it is naturally discharged from the patient. Then, thecapsule type endoscope 10100 successively transmits information of thein-vivo image to the external controlling apparatus 10200 outside thebody by wireless transmission.

The external controlling apparatus 10200 integrally controls operationof the in-vivo information acquisition system 10001. Further, theexternal controlling apparatus 10200 receives information of an in-vivoimage transmitted thereto from the capsule type endoscope 10100 andgenerates image data for displaying the in-vivo image on a displayapparatus (not depicted) on the basis of the received information of thein-vivo image.

In the in-vivo information acquisition system 10001, an in-vivo imageimaged a state of the inside of the body of a patient can be acquired atany time in this manner for a period of time until the capsule typeendoscope 10100 is discharged after it is swallowed.

A configuration and functions of the capsule type endoscope 10100 andthe external controlling apparatus 10200 are described in more detailbelow.

The capsule type endoscope 10100 includes a housing 10101 of the capsuletype, in which a light source unit 10111, an image pickup unit 10112, animage processing unit 10113, a wireless communication unit 10114, apower feeding unit 10115, a power supply unit 10116 and a control unit10117 are accommodated.

The light source unit 10111 includes a light source such as, forexample, a light emitting diode (LED) and irradiates light on an imagepickup field-of-view of the image pickup unit 10112.

The image pickup unit 10112 includes an image pickup element and anoptical system including a plurality of lenses provided at a precedingstage to the image pickup element. Reflected light (hereinafter referredto as observation light) of light irradiated on a body tissue which isan observation target is condensed by the optical system and introducedinto the image pickup element. In the image pickup unit 10112, theincident observation light is photoelectrically converted by the imagepickup element, by which an image signal corresponding to theobservation light is generated. The image signal generated by the imagepickup unit 10112 is provided to the image processing unit 10113.

The image processing unit 10113 includes a processor such as a centralprocessing unit (CPU) or a graphics processing unit (GPU) and performsvarious signal processes for an image signal generated by the imagepickup unit 10112. The image processing unit 10113 provides the imagesignal for which the signal processes have been performed thereby as RAWdata to the wireless communication unit 10114.

The wireless communication unit 10114 performs a predetermined processsuch as a modulation process for the image signal for which the signalprocesses have been performed by the image processing unit 10113 andtransmits the resulting image signal to the external controllingapparatus 10200 through an antenna 10114A. Further, the wirelesscommunication unit 10114 receives a control signal relating to drivingcontrol of the capsule type endoscope 10100 from the externalcontrolling apparatus 10200 through the antenna 10114A. The wirelesscommunication unit 10114 provides the control signal received from theexternal controlling apparatus 10200 to the control unit 10117.

The power feeding unit 10115 includes an antenna coil for powerreception, a power regeneration circuit for regenerating electric powerfrom current generated in the antenna coil, a voltage booster circuitand so forth. The power feeding unit 10115 generates electric powerusing the principle of non-contact charging.

The power supply unit 10116 includes a secondary battery and storeselectric power generated by the power feeding unit 10115. In FIG. 28 ,in order to avoid complicated illustration, an arrow mark indicative ofa supply destination of electric power from the power supply unit 10116and so forth are omitted. However, electric power stored in the powersupply unit 10116 is supplied to and can be used to drive the lightsource unit 10111, the image pickup unit 10112, the image processingunit 10113, the wireless communication unit 10114 and the control unit10117.

The control unit 10117 includes a processor such as a CPU and suitablycontrols driving of the light source unit 10111, the image pickup unit10112, the image processing unit 10113, the wireless communication unit10114 and the power feeding unit 10115 in accordance with a controlsignal transmitted thereto from the external controlling apparatus10200.

The external controlling apparatus 10200 includes a processor such as aCPU or a GPU, a microcomputer, a control board or the like in which aprocessor and a storage element such as a memory are mixedlyincorporated. The external controlling apparatus 10200 transmits acontrol signal to the control unit 10117 of the capsule type endoscope10100 through an antenna 10200A to control operation of the capsule typeendoscope 10100. In the capsule type endoscope 10100, an irradiationcondition of light upon an observation target of the light source unit10111 can be changed, for example, in accordance with a control signalfrom the external controlling apparatus 10200. Further, an image pickupcondition (for example, a frame rate, an exposure value or the like ofthe image pickup unit 10112) can be changed in accordance with a controlsignal from the external controlling apparatus 10200. Further, thesubstance of processing by the image processing unit 10113 or acondition for transmitting an image signal from the wirelesscommunication unit 10114 (for example, a transmission interval, atransmission image number or the like) may be changed in accordance witha control signal from the external controlling apparatus 10200.

Further, the external controlling apparatus 10200 performs various imageprocesses for an image signal transmitted thereto from the capsule typeendoscope 10100 to generate image data for displaying a picked upin-vivo image on the display apparatus. As the image processes, varioussignal processes can be performed such as, for example, a developmentprocess (demosaic process), an image quality improving process(bandwidth enhancement process, a super-resolution process, a noisereduction (NR) process and/or image stabilization process) and/or anenlargement process (electronic zooming process). The externalcontrolling apparatus 10200 controls driving of the display apparatus tocause the display apparatus to display a picked up in-vivo image on thebasis of generated image data. Alternatively, the external controllingapparatus 10200 may also control a recording apparatus (not depicted) torecord generated image data or control a printing apparatus (notdepicted) to output generated image data by printing.

An example of the in-vivo information acquisition system to which thetechnology according to the present disclosure may be applied has beendescribed above. The technology according to the present disclosure maybe applied, for example, to the image pickup unit 10112 among thecomponents described above. This makes it possible to increase thedetection accuracy.

Application Example 4 4. Example of Application to Endoscopic SurgerySystem

The technology (present technology) according to the present disclosureis applicable to various products. For example, the technology accordingto the present disclosure may be applied to an endoscopic surgerysystem.

FIG. 29 is a view depicting an example of a schematic configuration ofan endoscopic surgery system to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

In FIG. 29 , a state is illustrated in which a surgeon (medical doctor)11131 is using an endoscopic surgery system 11000 to perform surgery fora patient 11132 on a patient bed 11133. As depicted, the endoscopicsurgery system 11000 includes an endoscope 11100, other surgical tools11110 such as a pneumoperitoneum tube 11111 and an energy device 11112,a supporting arm apparatus 11120 which supports the endoscope 11100thereon, and a cart 11200 on which various apparatus for endoscopicsurgery are mounted.

The endoscope 11100 includes a lens barrel 11101 having a region of apredetermined length from a distal end thereof to be inserted into abody cavity of the patient 11132, and a camera head 11102 connected to aproximal end of the lens barrel 11101. In the example depicted, theendoscope 11100 is depicted which includes as a rigid endoscope havingthe lens barrel 11101 of the hard type. However, the endoscope 11100 mayotherwise be included as a flexible endoscope having the lens barrel11101 of the flexible type.

The lens barrel 11101 has, at a distal end thereof, an opening in whichan objective lens is fitted. A light source apparatus 11203 is connectedto the endoscope 11100 such that light generated by the light sourceapparatus 11203 is introduced to a distal end of the lens barrel 11101by a light guide extending in the inside of the lens barrel 11101 and isirradiated toward an observation target in a body cavity of the patient11132 through the objective lens. It is to be noted that the endoscope11100 may be a forward-viewing endoscope or may be an oblique-viewingendoscope or a side-viewing endoscope.

An optical system and an image pickup element are provided in the insideof the camera head 11102 such that reflected light (observation light)from the observation target is condensed on the image pickup element bythe optical system. The observation light is photo-electricallyconverted by the image pickup element to generate an electric signalcorresponding to the observation light, namely, an image signalcorresponding to an observation image. The image signal is transmittedas RAW data to a CCU 11201.

The CCU 11201 includes a central processing unit (CPU), a graphicsprocessing unit (GPU) or the like and integrally controls operation ofthe endoscope 11100 and a display apparatus 11202. Further, the CCU11201 receives an image signal from the camera head 11102 and performs,for the image signal, various image processes for displaying an imagebased on the image signal such as, for example, a development process(demosaic process).

The display apparatus 11202 displays thereon an image based on an imagesignal, for which the image processes have been performed by the CCU11201, under the control of the CCU 11201.

The light source apparatus 11203 includes a light source such as, forexample, a light emitting diode (LED) and supplies irradiation lightupon imaging of a surgical region to the endoscope 11100.

An inputting apparatus 11204 is an input interface for the endoscopicsurgery system 11000. A user can perform inputting of various kinds ofinformation or instruction inputting to the endoscopic surgery system11000 through the inputting apparatus 11204. For example, the user wouldinput an instruction or a like to change an image pickup condition (typeof irradiation light, magnification, focal distance or the like) by theendoscope 11100.

A treatment tool controlling apparatus 11205 controls driving of theenergy device 11112 for cautery or incision of a tissue, sealing of ablood vessel or the like. A pneumoperitoneum apparatus 11206 feeds gasinto a body cavity of the patient 11132 through the pneumoperitoneumtube 11111 to inflate the body cavity in order to secure the field ofview of the endoscope 11100 and secure the working space for thesurgeon. A recorder 11207 is an apparatus capable of recording variouskinds of information relating to surgery. A printer 11208 is anapparatus capable of printing various kinds of information relating tosurgery in various forms such as a text, an image or a graph.

It is to be noted that the light source apparatus 11203 which suppliesirradiation light when a surgical region is to be imaged to theendoscope 11100 may include a white light source which includes, forexample, an LED, a laser light source or a combination of them. Where awhite light source includes a combination of red, green, and blue (RGB)laser light sources, since the output intensity and the output timingcan be controlled with a high degree of accuracy for each color (eachwavelength), adjustment of the white balance of a picked up image can beperformed by the light source apparatus 11203. Further, in this case, iflaser beams from the respective RGB laser light sources are irradiatedtime-divisionally on an observation target and driving of the imagepickup elements of the camera head 11102 are controlled in synchronismwith the irradiation timings. Then images individually corresponding tothe R, G and B colors can be also picked up time-divisionally. Accordingto this method, a color image can be obtained even if color filters arenot provided for the image pickup element.

Further, the light source apparatus 11203 may be controlled such thatthe intensity of light to be outputted is changed for each predeterminedtime. By controlling driving of the image pickup element of the camerahead 11102 in synchronism with the timing of the change of the intensityof light to acquire images time-divisionally and synthesizing theimages, an image of a high dynamic range free from underexposed blockedup shadows and overexposed highlights can be created.

Further, the light source apparatus 11203 may be configured to supplylight of a predetermined wavelength band ready for special lightobservation. In special light observation, for example, by utilizing thewavelength dependency of absorption of light in a body tissue toirradiate light of a narrow band in comparison with irradiation lightupon ordinary observation (namely, white light), narrow band observation(narrow band imaging) of imaging a predetermined tissue such as a bloodvessel of a superficial portion of the mucous membrane or the like in ahigh contrast is performed. Alternatively, in special light observation,fluorescent observation for obtaining an image from fluorescent lightgenerated by irradiation of excitation light may be performed. Influorescent observation, it is possible to perform observation offluorescent light from a body tissue by irradiating excitation light onthe body tissue (autofluorescence observation) or to obtain afluorescent light image by locally injecting a reagent such asindocyanine green (ICG) into a body tissue and irradiating excitationlight corresponding to a fluorescent light wavelength of the reagentupon the body tissue. The light source apparatus 11203 can be configuredto supply such narrow-band light and/or excitation light suitable forspecial light observation as described above.

FIG. 30 is a block diagram depicting an example of a functionalconfiguration of the camera head 11102 and the CCU 11201 depicted inFIG. 29 .

The camera head 11102 includes a lens unit 11401, an image pickup unit11402, a driving unit 11403, a communication unit 11404 and a camerahead controlling unit 11405. The CCU 11201 includes a communication unit11411, an image processing unit 11412 and a control unit 11413. Thecamera head 11102 and the CCU 11201 are connected for communication toeach other by a transmission cable 11400.

The lens unit 11401 is an optical system, provided at a connectinglocation to the lens barrel 11101. Observation light taken in from adistal end of the lens barrel 11101 is guided to the camera head 11102and introduced into the lens unit 11401. The lens unit 11401 includes acombination of a plurality of lenses including a zoom lens and afocusing lens.

The number of image pickup elements which is included by the imagepickup unit 11402 may be one (single-plate type) or a plural number(multi-plate type). Where the image pickup unit 11402 is configured asthat of the multi-plate type, for example, image signals correspondingto respective R, G and B are generated by the image pickup elements, andthe image signals may be synthesized to obtain a color image. The imagepickup unit 11402 may also be configured so as to have a pair of imagepickup elements for acquiring respective image signals for the right eyeand the left eye ready for three dimensional (3D) display. If 3D displayis performed, then the depth of a living body tissue in a surgicalregion can be comprehended more accurately by the surgeon 11131. It isto be noted that, where the image pickup unit 11402 is configured asthat of stereoscopic type, a plurality of systems of lens units 11401are provided corresponding to the individual image pickup elements.

Further, the image pickup unit 11402 may not necessarily be provided onthe camera head 11102. For example, the image pickup unit 11402 may beprovided immediately behind the objective lens in the inside of the lensbarrel 11101.

The driving unit 11403 includes an actuator and moves the zoom lens andthe focusing lens of the lens unit 11401 by a predetermined distancealong an optical axis under the control of the camera head controllingunit 11405. Consequently, the magnification and the focal point of apicked up image by the image pickup unit 11402 can be adjusted suitably.

The communication unit 11404 includes a communication apparatus fortransmitting and receiving various kinds of information to and from theCCU 11201. The communication unit 11404 transmits an image signalacquired from the image pickup unit 11402 as RAW data to the CCU 11201through the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal forcontrolling driving of the camera head 11102 from the CCU 11201 andsupplies the control signal to the camera head controlling unit 11405.The control signal includes information relating to image pickupconditions such as, for example, information that a frame rate of apicked up image is designated, information that an exposure value uponimage picking up is designated and/or information that a magnificationand a focal point of a picked up image are designated.

It is to be noted that the image pickup conditions such as the framerate, exposure value, magnification or focal point may be designated bythe user or may be set automatically by the control unit 11413 of theCCU 11201 on the basis of an acquired image signal. In the latter case,an auto exposure (AE) function, an auto focus (AF) function and an autowhite balance (AWB) function are incorporated in the endoscope 11100.

The camera head controlling unit 11405 controls driving of the camerahead 11102 on the basis of a control signal from the CCU 11201 receivedthrough the communication unit 11404.

The communication unit 11411 includes a communication apparatus fortransmitting and receiving various kinds of information to and from thecamera head 11102. The communication unit 11411 receives an image signaltransmitted thereto from the camera head 11102 through the transmissioncable 11400.

Further, the communication unit 11411 transmits a control signal forcontrolling driving of the camera head 11102 to the camera head 11102.The image signal and the control signal can be transmitted by electricalcommunication, optical communication or the like.

The image processing unit 11412 performs various image processes for animage signal in the form of RAW data transmitted thereto from the camerahead 11102.

The control unit 11413 performs various kinds of control relating toimage picking up of a surgical region or the like by the endoscope 11100and display of a picked up image obtained by image picking up of thesurgical region or the like. For example, the control unit 11413 createsa control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 controls, on the basis of an imagesignal for which image processes have been performed by the imageprocessing unit 11412, the display apparatus 11202 to display a pickedup image in which the surgical region or the like is imaged. Thereupon,the control unit 11413 may recognize various objects in the picked upimage using various image recognition technologies. For example, thecontrol unit 11413 can recognize a surgical tool such as forceps, aparticular living body region, bleeding, mist when the energy device11112 is used and so forth by detecting the shape, color and so forth ofedges of objects included in a picked up image. The control unit 11413may cause, when it controls the display apparatus 11202 to display apicked up image, various kinds of surgery supporting information to bedisplayed in an overlapping manner with an image of the surgical regionusing a result of the recognition. Where surgery supporting informationis displayed in an overlapping manner and presented to the surgeon11131, the burden on the surgeon 11131 can be reduced and the surgeon11131 can proceed with the surgery with certainty.

The transmission cable 11400 which connects the camera head 11102 andthe CCU 11201 to each other is an electric signal cable ready forcommunication of an electric signal, an optical fiber ready for opticalcommunication or a composite cable ready for both of electrical andoptical communications.

Here, while, in the example depicted, communication is performed bywired communication using the transmission cable 11400, thecommunication between the camera head 11102 and the CCU 11201 may beperformed by wireless communication.

An example of the endoscopic surgery system to which the technologyaccording to the present disclosure may be applied has been describedabove. The technology according to the present disclosure may be appliedto the image pickup unit 11402 among the components described above.Applying the technology according to an embodiment of the presentdisclosure to the image pickup unit 11402 increases the detectionaccuracy.

It is to be noted that the endoscopic surgery system has been describedhere as an example, but the technology according to the presentdisclosure may be additionally applied to, for example, a microscopicsurgery system or the like.

Application Example 5 <Example of Application to Mobile Body>

The technology according to the present disclosure is applicable tovarious products. For example, the technology according to the presentdisclosure may be achieved as a device mounted on any type of mobilebody such as a vehicle, an electric vehicle, a hybrid electric vehicle,a motorcycle, a bicycle, a personal mobility, an airplane, a drone, avessel, a robot, a construction machine, or an agricultural machine(tractor).

FIG. 31 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 31 , the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to preventa glare by controlling the headlamp so as to change from a high beam toa low beam, for example, in accordance with the position of a precedingvehicle or an oncoming vehicle detected by the outside-vehicleinformation detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 31 , anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display.

FIG. 32 is a diagram depicting an example of the installation positionof the imaging section 12031.

In FIG. 32 , the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimaging section 12105 provided to the upper portion of the windshieldwithin the interior of the vehicle is used mainly to detect a precedingvehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, orthe like.

Incidentally, FIG. 32 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby superimposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

Description has been given above by referring to the embodiment, themodification examples 1 to 3, and the application examples, but thecontent of the present disclosure is not limited to the above-describedembodiment and the like, and various modifications are possible. Forexample, in the above-described embodiment, the photoelectric converters10 have a configuration in which the organic photoelectric conversionsection 20 that detects green light, and the inorganic photoelectricconversion sections 32B and 32R that detect blue light and red light,respectively, are stacked. However, the content of the presentdisclosure is not limited to such a structure. That is, the organicphotoelectric conversion section may detect the red light or the bluelight, or the inorganic photoelectric conversion sections may detect thegreen light.

In addition, the number of these organic photoelectric conversionsections and inorganic photoelectric conversion sections or a proportionthereof are not limited. The two or more organic photoelectricconversion sections may be provided or color signals of a plurality ofcolors may be obtained with the organic photoelectric conversion sectionalone. Further, the photoelectric converter and solid-state imagingdevice according to the present disclosure each do not necessarily haveto include all of the components described in the above-describedembodiment and the like, and may include another layer, conversely.

It is to be noted that the effects described herein are merely examples,but not limitative. In addition, there may be other effects.

It is to be noted that the present disclosure may have the followingconfigurations.

(1)

A photoelectric converter including:

an organic photoelectric conversion section including a first electrode,a second electrode, and an organic photoelectric conversion layer, thefirst electrode including one electrode and another electrode, thesecond electrode being disposed to be opposed to the first electrode,the organic photoelectric conversion layer being disposed between thefirst electrode and the second electrode and being electrically coupledto the one electrode, the organic photoelectric conversion layer and theother electrode being provided with an insulation layer therebetween;

an inorganic photoelectric conversion section with the first electrodedisposed between the inorganic photoelectric conversion section and theorganic photoelectric conversion section; and

an optical filter provided between the organic photoelectric conversionsection and the inorganic photoelectric conversion section.

(2)

The photoelectric converter according to (1), in which the opticalfilter is provided between the other electrode and the inorganicphotoelectric conversion section.

(3)

The photoelectric converter according to (1) or (2), in which

the organic photoelectric conversion section and the inorganicphotoelectric conversion section absorb respective pieces of light inwavelength bands different from each other, and

the optical filter selectively transmits light in a wavelength band, thelight being absorbed in the inorganic photoelectric conversion section.

(4)

The photoelectric converter according to any of (1) to (3), in which theinorganic photoelectric conversion section is provided in asemiconductor substrate, and a plurality of photoelectric conversionsections is disposed in a planar direction of the semiconductorsubstrate.

(5)

The photoelectric converter according to (4), in which

the optical filter includes a first optical filter and a second opticalfilter, the first optical filter selectively transmitting light in afirst wavelength band, the second optical filter selectivelytransmitting light in a second wavelength band, and

the first optical filter or the second optical filter is disposedbetween the first electrode and each of the plurality of photoelectricconversion sections.

(6)

The photoelectric converter according to (5), in which the first opticalfilters and the second optical filters are disposed in a checkerboardpattern or a striped pattern.

(7)

The photoelectric converter according to (5) or (6), in which

the optical filter further includes a third optical filter, the thirdoptical filter selectively transmitting light in a third wavelengthband, and

the first optical filters, the second optical filters, and the thirdoptical filters are disposed in a Bayer array.

(8)

The photoelectric converter according to (7), in which the opticalfilter further includes a fourth optical filter, the fourth opticalfilter selectively transmitting light in a fourth wavelength band.

(9)

The photoelectric converter according to (8), in which

the first optical filter, the second optical filter, the third opticalfilter, and the fourth optical filter are different from each other, and

the first optical filter, the second optical filter, the third opticalfilter, and the fourth optical filter each selectively transmit light inany of a red region, a green region, a blue region, or a visible region.

(10)

The photoelectric converter according to (9), in which the two firstoptical filters are disposed on one diagonal line, and the secondoptical filter and the third optical filter are disposed on anotherdiagonal line in a 2×2 array.

(11)

The photoelectric converter according to (9) or (10), in which the twofirst optical filters are disposed in one column to be adjacent to eachother, and the second optical filter and the third optical filter aredisposed in another column to be adjacent to each other in a 2×2 array.

(12)

The photoelectric converter according to any of (1) to (11), in which alight-shielding section is provided at least partially between theadjacent optical filters that selectively transmit respective pieces oflight in wavelength bands different from each other.

(13)

The photoelectric converter according to (12), in which thelight-shielding section includes a through electrode, the throughelectrode being electrically coupled to the one electrode andpenetrating a semiconductor substrate, the semiconductor substrateincluding the inorganic photoelectric conversion section.

(14)

The photoelectric converter according to (12) or (13), in which thelight-shielding section includes a driving wiring line, the drivingwiring line being electrically coupled to the other electrode.

(15)

The photoelectric converter according to any of (1) to (14), in whichthe optical filter includes an organic pigment.

(16)

The photoelectric converter according to any of (1) to (15), in whichthe optical filter is formed by using a plurality of openings.

(17)

The photoelectric converter according to any of (1) to (16), in whichthe optical filter includes a metal nanoparticle.

(18)

The photoelectric converter according to any of (1) to (17), in whichthe optical filter includes a multilayer interference film.

(19)

A solid-state imaging device including

a plurality of pixels each provided with one or more photoelectricconverters,

the photoelectric converters each including

-   -   an organic photoelectric conversion section including a first        electrode, a second electrode, and an organic photoelectric        conversion layer, the first electrode including one electrode        and another electrode, the second electrode being disposed to be        opposed to the first electrode, the organic photoelectric        conversion layer being disposed between the first electrode and        the second electrode and being electrically coupled to the one        electrode, the organic photoelectric conversion layer and the        other electrode being provided with an insulation layer        therebetween,    -   an inorganic photoelectric conversion section with the first        electrode disposed between the inorganic photoelectric        conversion section and the organic photoelectric conversion        section, and    -   an optical filter provided between the organic photoelectric        conversion section and the inorganic photoelectric conversion        section.

This application claims the priority on the basis of Japanese PatentApplication No. 2017-244346 filed with Japan Patent Office on Dec. 20,2017, the entire contents of which are incorporated in this applicationby reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations, and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A photoelectric converter comprising: an organicphotoelectric conversion section including a first electrode, a secondelectrode, and an organic photoelectric conversion layer, the firstelectrode including one electrode and another electrode, the secondelectrode being disposed to be opposed to the first electrode, theorganic photoelectric conversion layer being disposed between the firstelectrode and the second electrode and being electrically coupled to theone electrode, the organic photoelectric conversion layer and the otherelectrode being provided with an insulation layer therebetween; aninorganic photoelectric conversion section, wherein the first electrodeis disposed between the inorganic photoelectric conversion section andthe organic photoelectric conversion section; an optical filter providedbetween the organic photoelectric conversion section and the inorganicphotoelectric conversion section; and a through electrode penetrating asemiconductor substrate that includes the inorganic photoelectricconversion section, wherein, in a plan view, the through electrode is ata first side of the another electrode, and wherein, in a cross-sectionalview, the through electrode is between the inorganic photoelectricconversion section and an adjacent inorganic photoelectric conversionsection.
 2. The photoelectric converter according to claim 1, whereinthe through electrode is electrically coupled to the one electrode, andwherein the optical filter is provided between the another electrode andthe inorganic photoelectric conversion section.
 3. The photoelectricconverter according to claim 1, wherein the organic photoelectricconversion section and the inorganic photoelectric conversion sectionabsorb light in wavelength bands different from each other, and theoptical filter selectively transmits light in a wavelength band that isabsorbed in the inorganic photoelectric conversion section.
 4. Thephotoelectric converter according to claim 1, wherein a plurality ofinorganic photoelectric conversion sections is disposed in a planardirection of the semiconductor substrate.
 5. The photoelectric converteraccording to claim 4, wherein the optical filter includes a firstoptical filter and a second optical filter for each of the plurality ofinorganic photoelectric conversion sections, the first optical filterselectively transmitting light in a first wavelength band, the secondoptical filter selectively transmitting light in a second wavelengthband, each of the plurality of inorganic photoelectric conversionsections includes a respective first electrode, and the first opticalfilter or the second optical filter is disposed between each respectivefirst electrode and each of the plurality of inorganic photoelectricconversion sections.
 6. The photoelectric converter according to claim5, wherein the first optical filters and the second optical filters aredisposed in a checkerboard pattern or a striped pattern.
 7. Thephotoelectric converter according to claim 5, wherein the optical filterfurther includes a third optical filter for each of the plurality ofinorganic photoelectric conversion sections, the third optical filterselectively transmitting light in a third wavelength band, and the firstoptical filters, the second optical filters, and the third opticalfilters are disposed in a Bayer array.
 8. The photoelectric converteraccording to claim 7, wherein the optical filter further includes afourth optical filter for each of the plurality of inorganicphotoelectric conversion sections, the fourth optical filter selectivelytransmitting light in a fourth wavelength band.
 9. The photoelectricconverter according to claim 8, wherein the first optical filter, thesecond optical filter, the third optical filter, and the fourth opticalfilter are different from each other, and the first optical filter, thesecond optical filter, the third optical filter, and the fourth opticalfilter each selectively transmit light in one of a red region, a greenregion, a blue region, or a visible region.
 10. The photoelectricconverter according to claim 9, wherein two first optical filters aredisposed on one diagonal line, and the second optical filter and thethird optical filter are disposed on another diagonal line in a 2×2array.
 11. The photoelectric converter according to claim 9, wherein twofirst optical filters are disposed in one column to be adjacent to eachother, and the second optical filter and the third optical filter aredisposed in another column to be adjacent to each other in a 2×2 array.12. The photoelectric converter according to claim 1, furthercomprising: a driving wiring line that receives a voltage and that iselectrically coupled to the another electrode and at least one otherelectrode of an adjacent organic photoelectric conversion section,wherein, in the plan view, the driving wiring line extends acrossmultiple pixels to serve as a common wiring line for the multiplepixels.
 13. The photoelectric converter according to claim 12, whereinthe driving wiring line is disposed over an edge of the optical filterin the plan view.
 14. The photoelectric converter according to claim 13,wherein the driving wiring line is disposed over an edge of the oneelectrode in the plan view.
 15. The photoelectric converter according toclaim 1, wherein, in the plan view, the through electrode has anelongated shape that extends in a first direction along the first sideof the another electrode.
 16. The photoelectric converter according toclaim 1, wherein, in the plan view, the through electrode is sharedbetween multiple pixels.
 17. The photoelectric converter according toclaim 1, wherein, in the plan view the first side of the anotherelectrode corresponds to a corner of a pixel.
 18. The photoelectricconverter according to claim 1, wherein, in the cross-sectional view,the through electrode is between the optical filter and a neighboringoptical filter.
 19. The photoelectric converter according to claim 18,wherein the optical filter corresponds to a color filter that passes redlight and the neighboring optical filter corresponds to color filterthat passes blue light.
 20. A solid-state imaging device comprising aplurality of pixels each provided with one or more photoelectricconverters, the one or more photoelectric converters each including: anorganic photoelectric conversion section including a first electrode, asecond electrode, and an organic photoelectric conversion layer, thefirst electrode including one electrode and another electrode, thesecond electrode being disposed to be opposed to the first electrode,the organic photoelectric conversion layer being disposed between thefirst electrode and the second electrode and being electrically coupledto the one electrode, the organic photoelectric conversion layer and theanother electrode being provided with an insulation layer therebetween;an inorganic photoelectric conversion section, wherein the firstelectrode is disposed between the inorganic photoelectric conversionsection and the organic photoelectric conversion section; an opticalfilter provided between the organic photoelectric conversion section andthe inorganic photoelectric conversion section; and a through electrodepenetrating a semiconductor substrate that includes the inorganicphotoelectric conversion section, wherein, in a plan view, the throughelectrode is at a first side of the another electrode, and wherein, in across-sectional view, the through electrode is between the inorganicphotoelectric conversion section and an adjacent inorganic photoelectricconversion section.